IAUZN10S7L289ATMA1 vs IAUZ18N10S5L420ATMA1 对比
详细并排对比 IAUZN10S7L289ATMA1 出自 Infineon 和 IAUZ18N10S5L420ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUZN10S7L289ATMA1 | IAUZ18N10S5L420ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.92 | $0.48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-7 | — |
| Technology | Trench MOSFET (N-Channel) | OptiMOS 5 trench |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tj) | 27 A | — |
| Power Dissipation (Ptot, Tc=25°C) | 45 W | — |
| On-State Resistance (RDS(on), max, VGS=10V) | 28.9 mΩ | — |
| 封装 | PG-TSDSON-8-44 (S3O8, 3x3 mm²) | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Grade | AEC-Q100 qualified (Automotive MOSFET) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 1.7 V to 2.7 V |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| 工作温度范围 | -55°C to +175°C (Tj) | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | 1 |
| RoHS 状态 | Compliant | Compliant |
| 引脚数量 | 8 | — |
| RoHS Compliance | Yes | — |
| Series | — | OptiMOS 5 100V |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25°C | — | 18 A |
| On-Resistance RDS(on) max at VGS=10V | — | 42 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Total Gate Charge (Qg) typ. | — | 8.5 nC |
| Power Dissipation (PD) at TC=25°C | — | 30 W |
| 工作结温 | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 qualified |
| Configuration | — | Single with built-in diode |