IDD06SG60CXTMA2 vs IDD04SG60CXTMA2 对比
详细并排对比 IDD06SG60CXTMA2 出自 Infineon 和 IDD04SG60CXTMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IDD06SG60CXTMA2 | IDD04SG60CXTMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Diodes | Diodes |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.54 | $0.74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC™ Schottky Diode G3 (thinQ™) | CoolSiC G3 thinQ Schottky Diode |
| Diode Configuration | Single | — |
| Technology | Silicon Carbide (SiC) Schottky | — |
| Reverse Voltage (VRRM) | 600 V | — |
| Continuous Forward Current (IF) | 6 A | — |
| Repetitive Peak Forward Current (IFRM) | [DATA_NEEDED: IFRM] | — |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 32 A | — |
| Forward Voltage (VF) at IF=6A | 2.1 V (typical) | — |
| Reverse Current (IR) Max | 500 nA | — |
| Total Capacitive Charge (Qc) | [DATA_NEEDED: Qc value] | 4.5 nC |
| 工作结温 | -55 °C to +175 °C | — |
| 封装 / 外壳 | PG-TO252-3 (DPAK) | — |
| 安装方式 | Surface Mount (SMD/SMT) | — |
| Packaging | Cut Tape (Tape & Reel per factory standard) | — |
| RoHS 状态 | Compliant | Compliant |
| Device Type | — | Silicon Carbide (SiC) Schottky Diode, Single |
| Repetitive Peak Reverse Voltage (VRRM) | — | 600 V |
| Continuous Forward Current (IF), TC=135 C | — | 4 A |
| Non-Repetitive Forward Surge Current (IFSM), tp=10ms | — | [DATA_NEEDED: IFSM surge rating] |
| Forward Voltage (VF) typ. at IF=4A, Tj=25 C | — | 1.5 V |
| Total Capacitance (Ctot) at VR=400V | — | [DATA_NEEDED: Ctot at 400 V] |
| Reverse Current (IR) at VR=600V, Tj=25 C | — | [DATA_NEEDED: IR max at 600 V] |
| 工作结温范围 | — | -55 C to +175 C |
| Storage Temperature Range | — | -55 C to +150 C |
| 封装 | — | PG-TO252-3 (DPAK), 3-pin surface mount with tab |
| 安装类型 | — | Surface Mount |
| Lead-Free Finish | — | Yes (Sn plating) |
| MSL (Moisture Sensitivity Level) | — | MSL 3 (per JEDEC J-STD-020) |
| 无卤 | — | Yes |