IDD06SG60CXTMA2 vs IDD04SG60CXTMA2 비교
다음의 상세 나란히 비교: IDD06SG60CXTMA2 제조: Infineon 및 IDD04SG60CXTMA2 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IDD06SG60CXTMA2 | IDD04SG60CXTMA2 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | Diodes | Diodes |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.54 | $0.74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC™ Schottky Diode G3 (thinQ™) | CoolSiC G3 thinQ Schottky Diode |
| Diode Configuration | Single | — |
| Technology | Silicon Carbide (SiC) Schottky | — |
| Reverse Voltage (VRRM) | 600 V | — |
| Continuous Forward Current (IF) | 6 A | — |
| Repetitive Peak Forward Current (IFRM) | [DATA_NEEDED: IFRM] | — |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 32 A | — |
| Forward Voltage (VF) at IF=6A | 2.1 V (typical) | — |
| Reverse Current (IR) Max | 500 nA | — |
| Total Capacitive Charge (Qc) | [DATA_NEEDED: Qc value] | 4.5 nC |
| 동작 접합 온도 | -55 °C to +175 °C | — |
| 패키지 / 케이스 | PG-TO252-3 (DPAK) | — |
| 장착 스타일 | Surface Mount (SMD/SMT) | — |
| Packaging | Cut Tape (Tape & Reel per factory standard) | — |
| RoHS 상태 | Compliant | Compliant |
| Device Type | — | Silicon Carbide (SiC) Schottky Diode, Single |
| Repetitive Peak Reverse Voltage (VRRM) | — | 600 V |
| Continuous Forward Current (IF), TC=135 C | — | 4 A |
| Non-Repetitive Forward Surge Current (IFSM), tp=10ms | — | [DATA_NEEDED: IFSM surge rating] |
| Forward Voltage (VF) typ. at IF=4A, Tj=25 C | — | 1.5 V |
| Total Capacitance (Ctot) at VR=400V | — | [DATA_NEEDED: Ctot at 400 V] |
| Reverse Current (IR) at VR=600V, Tj=25 C | — | [DATA_NEEDED: IR max at 600 V] |
| 동작 접합 온도 범위 | — | -55 C to +175 C |
| Storage Temperature Range | — | -55 C to +150 C |
| 패키지 | — | PG-TO252-3 (DPAK), 3-pin surface mount with tab |
| 실장 유형 | — | Surface Mount |
| Lead-Free Finish | — | Yes (Sn plating) |
| MSL (Moisture Sensitivity Level) | — | MSL 3 (per JEDEC J-STD-020) |
| 할로겐 프리 | — | Yes |