IGB50N60TATMA1 vs IKD06N60RATMA1 对比
详细并排对比 IGB50N60TATMA1 出自 Infineon 和 IKD06N60RATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IGB50N60TATMA1 | IKD06N60RATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | IGBTs | IGBTs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.20 | $0.89 |
| Manufacturer | Infineon Technologies | — |
| Series | Trenchstop IGBT3 | — |
| Technology | Trench + Field-Stop | TRENCHSTOP RC-IGBT3 (Reverse Conducting) |
| Collector-Emitter Voltage (VCES) | 600 V | — |
| Continuous Collector Current (IC) at TC=25°C | 100 A | — |
| Continuous Collector Current (IC) at TC=100°C | 50 A | — |
| Pulsed Collector Current (ICM, tp limited by Tjmax) | 150 A | — |
| Total Power Dissipation (Ptot) at TC=25°C | 333 W | — |
| Gate-Emitter Threshold Voltage (VGE(th)) | 5.0 V (typ), 6.5 V (max) | — |
| 集电极-发射极饱和电压（Vce(sat)） | 1.5 V (typ at VGE=15V, IC=50A, TJ=25°C) | — |
| Short-Circuit Withstand Time (tsc) | 5 µs min at VCE=360V, TJ≤150°C | — |
| 工作结温 | -40 °C to +150 °C | — |
| 封装 | PG-TO263-3-2 (D2PAK / TO-263) | PG-TO252-3 (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| Co-packaged Diode | Anti-parallel EmCon3 diode | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 | — |
| Configuration | Single | Single with built-in diode |
| 晶体管类型 | — | IGBT - Trench Field Stop with anti-parallel diode |
| Collector-Emitter Voltage (VCE) | — | 600 V |
| Continuous Collector Current (IC) at TC=25C | — | 12 A |
| Pulsed Collector Current (ICM) | — | [DATA_NEEDED: pulsed collector current] |
| Maximum Power Dissipation | — | 100 W |
| Gate-Emitter Voltage (VGE) | — | [DATA_NEEDED: VGE max rating] |
| VCE(sat) at IC=6A, VGE=15V | — | [DATA_NEEDED: VCE(sat) typical] |
| Diode Forward Voltage (VF) at IF=6A | — | [DATA_NEEDED: VF typical] |
| 工作温度范围 | — | -40C to +150C (junction) |
| 引脚数量 | — | 3 (2 + Tab) |
| Automotive Qualified | — | Yes (per FindIC listing) |
| Switching Frequency Range (typical) | — | 4 kHz to 20 kHz (hard-switching) |