IGB50N60TATMA1 vs IKD06N60RATMA1 비교

다음의 상세 나란히 비교: IGB50N60TATMA1 제조: Infineon 및 IKD06N60RATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IKD06N60RATMA1 IKD06N60RATMA1 - 600V 12A TRENCHSTOP RC-IGBT | Infineon

IKD06N60RATMA1 - 600V 12A TRENCHSTOP RC-IGBT | Infineon

IKD06N60RATMA1 ✓ 활성

사양 비교

파라미터 IGB50N60TATMA1 IKD06N60RATMA1
브랜드 Infineon Infineon
카테고리 IGBTs IGBTs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.20 $0.89
Manufacturer Infineon Technologies —
Series Trenchstop IGBT3 —
Technology Trench + Field-Stop TRENCHSTOP RC-IGBT3 (Reverse Conducting)
Collector-Emitter Voltage (VCES) 600 V —
Continuous Collector Current (IC) at TC=25°C 100 A —
Continuous Collector Current (IC) at TC=100°C 50 A —
Pulsed Collector Current (ICM, tp limited by Tjmax) 150 A —
Total Power Dissipation (Ptot) at TC=25°C 333 W —
Gate-Emitter Threshold Voltage (VGE(th)) 5.0 V (typ), 6.5 V (max) —
컬렉터-이미터 포화 전압 (Vce(sat)) 1.5 V (typ at VGE=15V, IC=50A, TJ=25°C) —
Short-Circuit Withstand Time (tsc) 5 µs min at VCE=360V, TJ≤150°C —
동작 접합 온도 -40 °C to +150 °C —
패키지 PG-TO263-3-2 (D2PAK / TO-263) PG-TO252-3 (DPAK)
실장 유형 Surface Mount Surface Mount
Co-packaged Diode Anti-parallel EmCon3 diode —
RoHS 상태 Compliant Compliant
MSL 레벨 1 —
Configuration Single Single with built-in diode
트랜지스터 유형 — IGBT - Trench Field Stop with anti-parallel diode
Collector-Emitter Voltage (VCE) — 600 V
Continuous Collector Current (IC) at TC=25C — 12 A
Pulsed Collector Current (ICM) — [DATA_NEEDED: pulsed collector current]
Maximum Power Dissipation — 100 W
Gate-Emitter Voltage (VGE) — [DATA_NEEDED: VGE max rating]
VCE(sat) at IC=6A, VGE=15V — [DATA_NEEDED: VCE(sat) typical]
Diode Forward Voltage (VF) at IF=6A — [DATA_NEEDED: VF typical]
동작 온도 범위 — -40C to +150C (junction)
핀 수 — 3 (2 + Tab)
Automotive Qualified — Yes (per FindIC listing)
Switching Frequency Range (typical) — 4 kHz to 20 kHz (hard-switching)

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