IGB50N60TATMA1 vs IKD06N60RATMA1 Vergleich
Detaillierter Direktvergleich von IGB50N60TATMA1 von Infineon und IKD06N60RATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IGB50N60TATMA1 | IKD06N60RATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | IGBTs | IGBTs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,20 | $0,89 |
| Manufacturer | Infineon Technologies | — |
| Series | Trenchstop IGBT3 | — |
| Technology | Trench + Field-Stop | TRENCHSTOP RC-IGBT3 (Reverse Conducting) |
| Collector-Emitter Voltage (VCES) | 600 V | — |
| Continuous Collector Current (IC) at TC=25°C | 100 A | — |
| Continuous Collector Current (IC) at TC=100°C | 50 A | — |
| Pulsed Collector Current (ICM, tp limited by Tjmax) | 150 A | — |
| Total Power Dissipation (Ptot) at TC=25°C | 333 W | — |
| Gate-Emitter Threshold Voltage (VGE(th)) | 5.0 V (typ), 6.5 V (max) | — |
| Kollektor-Emitter-Sättigungsspannung (Vce(sat)) | 1.5 V (typ at VGE=15V, IC=50A, TJ=25°C) | — |
| Short-Circuit Withstand Time (tsc) | 5 µs min at VCE=360V, TJ≤150°C | — |
| Betriebs-Sperrschichttemperatur | -40 °C to +150 °C | — |
| Gehäuse | PG-TO263-3-2 (D2PAK / TO-263) | PG-TO252-3 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Co-packaged Diode | Anti-parallel EmCon3 diode | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | — |
| Configuration | Single | Single with built-in diode |
| Transistortyp | — | IGBT - Trench Field Stop with anti-parallel diode |
| Collector-Emitter Voltage (VCE) | — | 600 V |
| Continuous Collector Current (IC) at TC=25C | — | 12 A |
| Pulsed Collector Current (ICM) | — | [DATA_NEEDED: pulsed collector current] |
| Maximum Power Dissipation | — | 100 W |
| Gate-Emitter Voltage (VGE) | — | [DATA_NEEDED: VGE max rating] |
| VCE(sat) at IC=6A, VGE=15V | — | [DATA_NEEDED: VCE(sat) typical] |
| Diode Forward Voltage (VF) at IF=6A | — | [DATA_NEEDED: VF typical] |
| Betriebstemperaturbereich | — | -40C to +150C (junction) |
| Pin-Anzahl | — | 3 (2 + Tab) |
| Automotive Qualified | — | Yes (per FindIC listing) |
| Switching Frequency Range (typical) | — | 4 kHz to 20 kHz (hard-switching) |