IGD06N60TATMA1 - 600V 6A TRENCHSTOP IGBT3 | Infineon
料号： IGD06N60TATMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.96 | $96.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.62 | $620.00 |
IGD06N60TATMA1 概述
An Insulated Gate Bipolar Transistor (IGBT) is a voltage-controlled bipolar power semiconductor that merges the high input impedance and fast switching of a MOSFET with the low conduction drop of a bipolar transistor. In the power-management hierarchy, IGBTs sit between MOSFETs and thyristors, bridging DC-DC converters, motor drives, and inverter topologies at voltage and current levels where MOSFET conduction losses become prohibitive.
Key features of the IGD06N60TATMA1 include a TRENCHSTOP IGBT3 cell architecture with a soft-recovery emitter-controlled diode co-packaged on the same die, an integrated gate clamp structure, and low saturation voltage. The trench-cell field-stop geometry reduces both VCE(sat) and turn-off switching losses versus planar PT/NPT IGBT generations, while the soft-recovery diode minimizes reverse-recovery losses and EMI during hard-switching transitions. The device is intended for hard-switching topologies including PFC boost stages, half-bridge converters, and motor-drive inverters operating up to 600 V bus rails.
In typical applications, the IGD06N60TATMA1 is used in PFC boost converters, induction-heating inverter half-bridges, washing-machine motor drives, dish-washer motor drives, refrigerator compressor drives, and air-conditioner outdoor-unit inverters. A continuous 6 A rating supports appliance-class motor power levels in the 200 W to 1500 W range. The integrated anti-parallel diode simplifies bridge designs where a body diode or external freewheeling diode would otherwise be required.
When designing with this part, derate the collector current against switching frequency because switching losses scale with fsw. Provide a 15 V gate drive with respect to emitter, keep the gate-drive loop inductance below 50 nH to avoid Miller-induced turn-on, and respect the maximum junction temperature of 175 °C. The DPAK (TO-252) package requires at least 6 cm² of copper pour on the PCB tab to keep junction temperatures within safe limits.
直接替换替代料： IGD06N60TATMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IGD06N60TATMA1 （相同外形与封装尺寸） ——差异在于 Technology, Package, Operating Junction Temperature, Configuration, Integrated Diode.
快速对比工具——选择替代料号进行并排对比：
IKD06N60RATMA1
✅ 直接替换✓ 有现货
$0.89 / 个
查看数据手册 →IKD10N60RC2ATMA1
✅ 直接替换✓ 有现货
$0.83 / 个
查看数据手册 →IDD06SG60CXTMA2
✅ 直接替换✓ 有现货
$1.54 / 个
查看数据手册 →STGD5H60DF
✅ 直接替换📋 参考替代料（不在目录中）
IRG4RC10SDTRPBF
✅ 直接替换📋 参考替代料（不在目录中）
IGD06N60TATMA1 最大额定值与电气特性
| Manufacturer | Infineon Technologies |
| Series | TRENCHSTOP IGBT3 |
| IGBT Type | Trench Field Stop |
| Collector-Emitter Voltage (VCE) | 600 V |
| Continuous Collector Current (IC) at TC=25°C | 12 A |
| Continuous Collector Current (IC) at TC=100°C | 6 A |
| Maximum Pulsed Collector Current (ICM) | 18 A (per datasheet) |
| Maximum Power Dissipation (Ptot) | 88 W |
| Gate-Emitter Voltage (VGE) | ±20 V |
| VCE(sat) at IC=6A, VGE=15V, Tj=25°C | 1.5 V (typical) |
| Gate Threshold Voltage (VGE(th)) | 3.0 V min / 5.0 V max (typical 4.0 V) |
| Integrated Diode | Yes, soft-recovery emitter-controlled diode |
| 工作结温 | -40 °C to +175 °C |
| Storage Temperature | -55 °C to +150 °C |
| 封装 | PG-TO252-3-11 (DPAK / TO-252) |
| 安装类型 | Surface Mount |
| RoHS 状态 | Compliant |
| Lead-Free | Yes |
IGD06N60TATMA1 引脚配置
| 引脚 1 | Gate (G) — Gate control input (15 V typical drive) |
| 引脚 2 | Collector (C) — High-voltage collector terminal (also tied to tab) |
| 引脚 3 | Emitter (E) — Reference for gate drive, return for load current |
典型应用
IGD06N60TATMA1 适用于 7 应用s: PFC Boost Converter Stage, Induction-Heating Inverter Half-Bridge, Washing-Machine Motor Drive, Refrigerator Compressor Inverter, Air-Conditioner Outdoor-Unit Inverter, Solar Micro-Inverter DC-DC Stage, Dish-Washer Drain Pump Inverter.
PFC Boost Converter Stage
The IGD06N60TATMA1's 600 V VCE rating and 6 A continuous collector current make it well suited for the boost switch in CCM/DCM Power Factor Correction (PFC) stages used in 110/220 VAC offline SMPS and digital TV/PC power supplies. Its TRENCHSTOP IGBT3 technology delivers a low 1.5 V VCE(sat) at rated current, reducing conduction loss versus planar NPT IGBTs by approximately 30%. The integrated soft-recovery anti-parallel diode simplifies the boost-inductor current-freewheeling path and reduces reverse-recovery losses that would otherwise degrade PFC power factor at high line. Placed between the bridge-rectified 400 VDC bus and the boost inductor, the IGD06N60TATMA1 supports PFC stages in the 300 W to 1500 W range at switching frequencies of 16 to 40 kHz. Compared with a 600 V MOSFET, the IGBT's lower conduction drop at 6 A reduces total PFC-stage loss, though its switching loss penalty makes it less suitable above 70 kHz.
推荐
Induction-Heating Inverter Half-Bridge
The IGD06N60TATMA1 is commonly deployed in the low-side and high-side switch positions of series-resonant half-bridge induction-heating inverters used in induction cooktops and rice cookers. Its 600 V breakdown and 6 A current rating suit 1.5 kW to 3 kW single-burner or multi-burner cooktop designs operating from a 220 VAC rectified 310 VDC bus. The TRENCHSTOP IGBT3 cell delivers 25 to 50% lower switching loss than NPT IGBTs in zero-voltage-switching (ZVS) or zero-current-switching (ZCS) induction-heating topologies running at 20 to 50 kHz. The integrated soft-recovery anti-parallel diode eliminates the need for a separate freewheeling diode across the IGBT. For best results, gate-drive a 15 V emitter-referenced supply with a 10 ohm gate resistor to limit ringing, and place a 100 V / 1 nF snubber across the C-E terminals.
推荐
Washing-Machine Motor Drive
The IGD06N60TATMA1 fits the variable-frequency inverter section of direct-drive washing-machine motors operating from 220 VAC. Its 600 V / 6 A ratings support inverter legs driving a 3-phase induction motor in the 200 W to 1500 W range, and the TO-252 (DPAK) surface-mount package suits the small PCB area inside the appliance chassis. The integrated anti-parallel diode simplifies the inverter leg topology, and the TRENCHSTOP IGBT3 soft-recovery characteristics reduce EMI in the IGBT's turn-on event, easing compliance with home-appliance EMC regulations. Compared to discrete MOSFET bridges, the IGBT's lower conduction drop at the motor drive's typical 5 to 10 kHz PWM frequency keeps inverter efficiency above 95%. For best results, use an SOI gate driver such as the 6EDL04N02PRXUMA1 with 1 kV isolation and built-in short-circuit protection.
推荐
Refrigerator Compressor Inverter
The IGD06N60TATMA1 is widely used in the inverter stage of variable-speed refrigerator compressors, where its 600 V breakdown handles the 310 VDC bus from 220 VAC mains. Its 6 A continuous collector current supports compressor inverter legs in 100 W to 500 W refrigerator compressors, while the TO-252 (DPAK) package handles the thermal load at low ambient temperatures inside the appliance. The TRENCHSTOP IGBT3's low VCE(sat) reduces inverter losses, keeping the compressor's inverter running at 92 to 95% efficiency and reducing cabinet heat. The integrated soft-recovery diode enables clean switching at 4 to 8 kHz PWM frequencies typical of residential refrigerator inverters. When the design calls for 24/7 continuous operation, the 175 °C maximum junction temperature and TRENCHSTOP ruggedness ensure long-term reliability under compressor-startup stress.
推荐
Air-Conditioner Outdoor-Unit Inverter
The IGD06N60TATMA1 fits the inverter stage of residential split-system air-conditioner outdoor units, which drive the compressor and outdoor fan. Its 600 V / 6 A ratings support 1 kW to 3 kW class inverter legs, and the TO-252 (DPAK) footprint supports the higher-power 2-layer or 4-layer FR-4 PCBs typical of outdoor-unit designs. The TRENCHSTOP IGBT3 technology offers fast turn-on and soft turn-off that simplifies EMI-filter design, which is critical for outdoor units that must meet stringent conducted-emission standards. The integrated soft-recovery diode eliminates an external freewheeling diode in the inverter leg. Placed as the low-side switch in each of three inverter legs, the IGD06N60TATMA1 operates at 5 to 16 kHz PWM and can be combined with an IRAM-style IPM or a discrete SOI gate driver for compact designs.
推荐
Solar Micro-Inverter DC-DC Stage
The IGD06N60TATMA1 is used in the DC-DC stage of single-panel solar micro-inverters, where its 600 V rating comfortably exceeds the 600 VDC open-circuit voltage of 60-cell PV strings. Its 6 A continuous current suits 200 W to 600 W micro-inverter designs operating from 25 V to 45 VDC input and stepping up to a 400 VDC link for the downstream grid-tie inverter. The integrated anti-parallel diode reduces part count in the flyback or boost DC-DC topology. The TRENCHSTOP IGBT3's low conduction drop helps maintain conversion efficiency above 95% even at high-line 45 VDC input. For higher switching frequencies above 50 kHz, consider the IKD06N60RATMA1 as an alternative, which trades lower VCE(sat) for lower Eoff. Either way, the DPAK package enables compact, sealed micro-inverter enclosures that withstand outdoor humidity and temperature swings.
推荐
Dish-Washer Drain Pump Inverter
The IGD06N60TATMA1 is well matched to small inverter stages that drive drain and circulation pumps in dish-washer appliances. Its 600 V rating handles the rectified 220 VAC bus while delivering 6 A for 100 W to 300 W class pump motors. The TO-252 (DPAK) package supports single-layer PCB layouts typical of compact appliance control boards, and its integrated anti-parallel diode eliminates the need for a freewheeling diode in the inverter leg. The TRENCHSTOP IGBT3's low VCE(sat) reduces the I²R losses that would otherwise require a larger heatsink, and its fast switching speeds enable 8 to 20 kHz PWM for smoother pump speed control. For best results, gate-drive with a low-side SOI driver such as the 2EDN8534FXTMA1 to keep the total BOM cost and PCB area low in this cost-sensitive appliance segment.
推荐
推荐产品汇总
工程参考数据： IGD06N60TATMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IKD06N60RATMA1 | IKD10N60RC2ATMA1 | IDD06SG60CXTMA2 | STGD5H60DF | IRG4RC10SDTRPBF |
|---|---|---|---|---|---|---|
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | DPAK - same | DPAK - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics | Infineon Technologies (legacy IR) |
| VCE Rating | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous IC at TC=100C | 6 A | 6 A | 10 A | 6 A | 5 A | 8 A |
| VCE(sat) typical | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.6 V | 1.7 V |
| Integrated Diode | Yes (soft recovery) | Yes (RC-IGBT) | Yes (RC-IGBT) | Yes (Rapid 1) | Yes | Yes (NPT) |
| IGBT Technology | TRENCHSTOP IGBT3 | RC-IGBT3 | RC-IGBT3 | IGBT + Rapid 1 diode | Planar NPT IGBT | Planar NPT IGBT |
| Unit Price (qty 1) | $1.42 | $1.55 | $2.10 | $1.65 | $1.30 | $1.85 |
关键差异点
- TRENCHSTOP IGBT3 cell geometry with integrated soft-recovery diode （对比 STGD5H60DF)
- Same TO-252 (DPAK) footprint as legacy IRG4RC10SD （对比 IRG4RC10SDTRPBF)
- Co-packaged anti-parallel diode eliminates external component （对比 Discrete MOSFET bridge with external freewheeling diode)
设计说明
Estimated: at IC=6 A, VCE(sat)=1.5 V typical, the IGD06N60TATMA1 dissipates approximately 9 W of conduction loss in continuous conduction mode. The DPAK (TO-252) package has a typical RθJA of approximately 50 C/W on a standard 6 cm² 2-oz copper-pour footprint, producing a 75 °C junction-temperature rise above 25 °C ambient. To stay within the 175 °C maximum junction, derate case temperature to 100 °C, which corresponds to roughly 50 °C ambient with the recommended footprint. Increase the copper pad to 12 cm² on 4-layer boards to lower RθJA toward 35 C/W for higher-power applications.
Use a 15 V gate-drive referenced to emitter with a 10 to 22 Ω gate resistor to limit ringing and control dV/dt. Keep the gate-driver-to-IGBT loop area below 50 mm² to minimize parasitic inductance, which can cause Miller-effect turn-on during the opposite transistor's turn-on event. Place a 0.1 µF X7R ceramic decoupling capacitor directly between VCC and VEE pins of the gate driver. For hard-switching applications above 5 kHz, add a 100 V / 1 nF R-C snubber across the collector-emitter to limit voltage overshoot.
Do not exceed ±20 V VGE absolute maximum: even brief transients above 20 V can puncture the gate oxide and destroy the device permanently. Never parallel IGD06N60TATMA1 devices without emitter ballast resistors - the part has positive temperature coefficient of VCE(sat) but insufficient thermal coefficient for safe paralleling without balancing. Avoid operating below the -40 °C minimum junction temperature, which can cause MOSFET-mode latch-up during cold-start. For applications where the IGBT must switch inductive loads, always provide a flyback path (the integrated diode handles this in inverter legs) and respect the 18 A pulsed-collector-current rating.
合规信息
RoHS compliant per Infineon product page. Not AEC-Q100 qualified; this part targets consumer and appliance applications rather than automotive. Halogen-free status not explicitly stated in available data - set to unknown.
