IHW40N120R5XKSA1 vs IPP100N12S305AKSA1 对比

详细并排对比 IHW40N120R5XKSA1 出自 Infineon 和 IPP100N12S305AKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IHW40N120R5XKSA1 IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon

IHW40N120R5XKSA1 ✓ 量产中
Infineon
IPP100N12S305AKSA1 IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon

IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon

IPP100N12S305AKSA1 ✓ 量产中

规格对比

参数 IHW40N120R5XKSA1 IPP100N12S305AKSA1
品牌 Infineon Infineon
分类 IGBTs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.50 $2.05
Collector-Emitter Voltage (VCE) 1200 V —
Continuous Collector Current (IC, TC=25C) 80 A —
Pulsed Collector Current (ICM) 160 A —
Maximum Power Dissipation (Ptot) 394 W —
Gate-Emitter Voltage (VGE) +/-20 V —
VCE(sat) at IC=40A, VGE=15V, Tj=25C [DATA_NEEDED: typical VCE(sat) value] —
Integrated Anti-Parallel Diode Yes (monolithic reverse-conducting) —
Technology Trench Field Stop, Reverse-Conducting RC-H5 OptiMOS trench
封装 TO-247-3 (PG-TO247-3) through-hole TO-220 (PG-TO220-3-1)
安装类型 Through Hole Through Hole
工作结温 -40C to +175C -55 °C to +175 °C
Storage Temperature -55C to +150C —
Soldering Temperature (max 10s) 260 C —
Switching Application Resonant / soft switching (induction cooking optimized) —
RoHS Compliance Compliant Compliant (Green product)
无卤 Yes —
MSL 等级 N/A (through-hole) —
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 120 V
Continuous Drain Current (ID) at Tc — 100 A
脉冲漏极电流 — [DATA_NEEDED: pulsed ID value]
Maximum Power Dissipation (Ptot) at Tc — 300 W
Gate-Source Voltage (VGS) max — ±20 V
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Avalanche Energy, Single Pulse — [DATA_NEEDED: EAS]
引脚数量 — 3
MSL Moisture Sensitivity Level — 1 (260 °C peak reflow)
Automotive Qualification — AEC-Q101 qualified
Avalanche Tested — 100% tested

数据手册与资源

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