IKD04N60RATMA1 vs IKD06N60RATMA1 对比
详细并排对比 IKD04N60RATMA1 出自 Infineon 和 IKD06N60RATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IKD04N60RATMA1 | IKD06N60RATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | IGBTs | IGBTs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.92 | $0.89 |
| Manufacturer | Infineon Technologies | — |
| Series | RC-Drives | — |
| 晶体管类型 | IGBT - Trench Field Stop with integrated diode | IGBT - Trench Field Stop with anti-parallel diode |
| Collector-Emitter Voltage (VCES) | 600 V | — |
| Continuous Collector Current (IC) at TC=25C | 8 A | 12 A |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: pulsed collector current] | [DATA_NEEDED: pulsed collector current] |
| Power Dissipation (PD) at TC=25C | 75 W | — |
| Gate-Emitter Voltage (VGES) | [DATA_NEEDED: gate-emitter voltage rating] | — |
| VCE(sat) at IC=4A, VGE=15V | [DATA_NEEDED: VCE(sat) typical at 4A] | — |
| Gate Threshold Voltage (VGE(th)) | [DATA_NEEDED: VGE(th)] | — |
| Integrated Anti-Parallel Diode | Yes | — |
| 工作温度范围 | -40C to +150C | -40C to +150C (junction) |
| 封装 | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 3 (2 leads + tab) | 3 (2 + Tab) |
| Configuration | Single | Single with built-in diode |
| MSL 等级 | 1 | — |
| RoHS 状态 | Compliant | Compliant |
| Technology Target | Consumer drives / motor control | — |
| Collector-Emitter Voltage (VCE) | — | 600 V |
| Maximum Power Dissipation | — | 100 W |
| Gate-Emitter Voltage (VGE) | — | [DATA_NEEDED: VGE max rating] |
| Technology | — | TRENCHSTOP RC-IGBT3 (Reverse Conducting) |
| VCE(sat) at IC=6A, VGE=15V | — | [DATA_NEEDED: VCE(sat) typical] |
| Diode Forward Voltage (VF) at IF=6A | — | [DATA_NEEDED: VF typical] |
| Automotive Qualified | — | Yes (per FindIC listing) |
| Switching Frequency Range (typical) | — | 4 kHz to 20 kHz (hard-switching) |