IKD04N60RATMA1 vs IKD06N60RATMA1 비교
다음의 상세 나란히 비교: IKD04N60RATMA1 제조: Infineon 및 IKD06N60RATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IKD04N60RATMA1 | IKD06N60RATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | IGBTs | IGBTs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.92 | $0.89 |
| Manufacturer | Infineon Technologies | — |
| Series | RC-Drives | — |
| 트랜지스터 유형 | IGBT - Trench Field Stop with integrated diode | IGBT - Trench Field Stop with anti-parallel diode |
| Collector-Emitter Voltage (VCES) | 600 V | — |
| Continuous Collector Current (IC) at TC=25C | 8 A | 12 A |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: pulsed collector current] | [DATA_NEEDED: pulsed collector current] |
| Power Dissipation (PD) at TC=25C | 75 W | — |
| Gate-Emitter Voltage (VGES) | [DATA_NEEDED: gate-emitter voltage rating] | — |
| VCE(sat) at IC=4A, VGE=15V | [DATA_NEEDED: VCE(sat) typical at 4A] | — |
| Gate Threshold Voltage (VGE(th)) | [DATA_NEEDED: VGE(th)] | — |
| Integrated Anti-Parallel Diode | Yes | — |
| 동작 온도 범위 | -40C to +150C | -40C to +150C (junction) |
| 패키지 | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| 실장 유형 | Surface Mount | Surface Mount |
| 핀 수 | 3 (2 leads + tab) | 3 (2 + Tab) |
| Configuration | Single | Single with built-in diode |
| MSL 레벨 | 1 | — |
| RoHS 상태 | Compliant | Compliant |
| Technology Target | Consumer drives / motor control | — |
| Collector-Emitter Voltage (VCE) | — | 600 V |
| Maximum Power Dissipation | — | 100 W |
| Gate-Emitter Voltage (VGE) | — | [DATA_NEEDED: VGE max rating] |
| Technology | — | TRENCHSTOP RC-IGBT3 (Reverse Conducting) |
| VCE(sat) at IC=6A, VGE=15V | — | [DATA_NEEDED: VCE(sat) typical] |
| Diode Forward Voltage (VF) at IF=6A | — | [DATA_NEEDED: VF typical] |
| Automotive Qualified | — | Yes (per FindIC listing) |
| Switching Frequency Range (typical) | — | 4 kHz to 20 kHz (hard-switching) |