IKD04N60RATMA1 vs IKD06N60RATMA1 Vergleich

Detaillierter Direktvergleich von IKD04N60RATMA1 von Infineon und IKD06N60RATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IKD04N60RATMA1 IKD06N60RATMA1
Marke Infineon Infineon
Kategorie IGBTs IGBTs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,92 $0,89
Manufacturer Infineon Technologies —
Series RC-Drives —
Transistortyp IGBT - Trench Field Stop with integrated diode IGBT - Trench Field Stop with anti-parallel diode
Collector-Emitter Voltage (VCES) 600 V —
Continuous Collector Current (IC) at TC=25C 8 A 12 A
Pulsed Collector Current (ICM) [DATA_NEEDED: pulsed collector current] [DATA_NEEDED: pulsed collector current]
Power Dissipation (PD) at TC=25C 75 W —
Gate-Emitter Voltage (VGES) [DATA_NEEDED: gate-emitter voltage rating] —
VCE(sat) at IC=4A, VGE=15V [DATA_NEEDED: VCE(sat) typical at 4A] —
Gate Threshold Voltage (VGE(th)) [DATA_NEEDED: VGE(th)] —
Integrated Anti-Parallel Diode Yes —
Betriebstemperaturbereich -40C to +150C -40C to +150C (junction)
Gehäuse PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Montageart Surface Mount Surface Mount
Pin-Anzahl 3 (2 leads + tab) 3 (2 + Tab)
Configuration Single Single with built-in diode
MSL-Level 1 —
RoHS-Status Compliant Compliant
Technology Target Consumer drives / motor control —
Collector-Emitter Voltage (VCE) — 600 V
Maximum Power Dissipation — 100 W
Gate-Emitter Voltage (VGE) — [DATA_NEEDED: VGE max rating]
Technology — TRENCHSTOP RC-IGBT3 (Reverse Conducting)
VCE(sat) at IC=6A, VGE=15V — [DATA_NEEDED: VCE(sat) typical]
Diode Forward Voltage (VF) at IF=6A — [DATA_NEEDED: VF typical]
Automotive Qualified — Yes (per FindIC listing)
Switching Frequency Range (typical) — 4 kHz to 20 kHz (hard-switching)

Datenblätter & Ressourcen

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