IGLT65R035D2ATMA1 - 650V 47A CoolGaN™ G5 Transistor | Infineon
料号： IGLT65R035D2ATMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $9.28 | $9.28 |
| 10 | $8.45 | $84.50 |
| 100 | $7.2 | $720.00 |
| 500 | $6.05 | $3,025.00 |
| 1,000 | $5.1 | $5,100.00 |
IGLT65R035D2ATMA1 概述
An enhancement-mode GaN HEMT (high-electron-mobility transistor) is a wide-bandgap power switch whose two-dimensional electron gas (2DEG) channel conducts only when a positive gate voltage is applied. Compared to silicon MOSFETs and IGBTs, GaN transistors offer lower gate charge (Qg), lower output charge (Qoss), zero reverse-recovery charge (Qrr), and switching speeds one to two orders of magnitude faster, enabling smaller magnetics, higher switching frequencies (100 kHz to >1 MHz), and higher system efficiency (>98% in well-designed LLC and totem-pole PFC stages). The CoolGaN™ G5 generation specifically targets industrial and telecom power-supply designs that require both high reliability and compact form factors.
Key features of the IGLT65R035D2ATMA1 include 650 V drain-source blocking voltage, 47 A continuous drain current, 154 W maximum power dissipation, a Kelvin-source pin for low-inductance gate driving, and top-side cooling via a large exposed pad on the upper surface of the HDSOP-16-8 package. The top-cool configuration enables direct attachment to a heatsink or cold plate, removing thermal bottlenecks that constrain bottom-cooled DFN packages in planar layouts.
Architecturally, the device uses a normally-off cascode-free GaN-on-Si HEMT with an integrated gate clamp, enabling robust behaviour during transients and simplified gate-drive requirements. The very low Qg × Rds(on) figure of merit (FOM) translates directly into reduced switching losses at high dV/dt, which is critical for hard-switched and soft-switched topologies such as totem-pole PFC, LLC, and active-clamp flyback converters used in server, telecom, and renewable-energy applications.
Typical applications include 1 kW to 6 kW AC-DC power supplies using totem-pole PFC, high-density server and hyperscaler power-supply units (PSUs), telecom rectifier modules, solar inverters and energy-storage DC-DC stages, and industrial motor drives. The wide Vds rating also makes it suitable for 380-400 V DC-bus systems found in e-mobility charging and industrial automation.
When designing with this part, ensure the gate-drive loop inductance is minimised by routing the gate and Kelvin-source traces as a tightly-coupled differential pair, and place a small ferrite bead or gate resistor (typically 5-15 ohm) close to the gate pin to dampen ringing. The top-side thermal pad should be soldered or thermally-attached to a heatsink; thermal-interface material (TIM) with high conductivity (>5 W/mK) is recommended for best results.
This page synthesises distributor pricing, pin-compatible CoolGaN drop-in alternatives, and practical thermal and gate-drive design notes that are not collated in the manufacturer datasheet alone, helping engineers quickly evaluate the IGLT65R035D2ATMA1 for next-generation high-density power-conversion designs.
直接替换替代料： IGLT65R035D2ATMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IGLT65R035D2ATMA1 （相同外形与封装尺寸） ——差异在于 Package, Product Family, Operating Junction Temperature, Technology, Mounting Type.
快速对比工具——选择替代料号进行并排对比：
IGLT65R035D2
✅ 直接替换📋 参考替代料（不在目录中）
IGLR70R200D2SXUMA1
✅ 直接替换✓ 有现货
$1.24 / 个
查看数据手册 →IMLT65R040M2HXTMA1
✅ 直接替换✓ 有现货
$4.25 / 个
查看数据手册 →IDL04G65C5XUMA2
✅ 直接替换✓ 有现货
$0.92 / 个
查看数据手册 →BSC076N04NDATMA1
✅ 直接替换✓ 有现货
$0.82 / 个
查看数据手册 →IAUC120N04S6L015ATMA1
✅ 直接替换📋 参考替代料（不在目录中）
IGLT65R035D2ATMA1 最大额定值与电气特性
| Manufacturer | Infineon Technologies |
| Product Family | CoolGaN™ G5 TOLT |
| 晶体管类型 | N-Channel enhancement-mode GaN HEMT |
| Drain-Source Voltage (Vdss) | 650 V |
| Continuous Drain Current (Id) at Tc | 47 A |
| Maximum Power Dissipation (Pd) at Tc | 154 W |
| Input Capacitance (Ciss) at Vds=400V | 540 pF |
| 封装 | PG-HDSOP-16-8 (top-side cooled) |
| 安装类型 | Surface Mount |
| Cooling Configuration | Top-side cooled (TOLT) |
| RoHS 状态 | Compliant |
| Lead-Free | Yes |
| Production Wafer Size | 200 mm (8 inch) |
IGLT65R035D2ATMA1 pg-hdsop-16-8 (top-side cooled) 引脚配置指南
IGLT65R035D2ATMA1（pg-hdsop-16-8 (top-side cooled) 封装）的引脚配置。 该功率器件具有栅极、漏极和源极端子。对于无极性封装，请参阅制造商数据手册以了解确切的引脚 1 方向和封装尺寸细节。常见应用包括电源设计、电机驱动和负载开关。
暂无详细引脚数据： IGLT65R035D2ATMA1.
请参阅 数据手册 以查看完整引脚配置。
典型应用
IGLT65R035D2ATMA1 适用于 6 应用s: Totem-Pole Bridgeless PFC, Server and Hyperscaler PSU, Telecom Rectifier Module, Solar Inverter DC-DC Stage, Industrial Motor Drive, EV On-Board Charger (OBC).
Totem-Pole Bridgeless PFC
The IGLT65R035D2ATMA1 is purpose-built for totem-pole bridgeless PFC stages in 1-3 kW AC-DC power supplies, where its 650 V drain-source rating handles rectified 400 VAC line peaks (up to 565 VDC) with derating margin. The CoolGaN™ G5 enhancement-mode HEMT has zero reverse-recovery charge (Qrr = 0), eliminating the slow-body-diode switching losses that plague silicon MOSFETs in this hard-commutated topology and enabling >99% efficiency per Infineon's reference designs. The 47 A continuous drain current supports full-power operation at 70 kHz-200 kHz switching frequencies, while the PG-HDSOP-16-8 top-side cooled package enables direct attachment to a heatsink, removing thermal bottlenecks. Pair with the Infineon 1ED020I12B2XUMA1 or 2EDL8033G4CXTMA1 isolated gate driver for optimal gate-loop inductance and dv/dt immunity.
推荐
Server and Hyperscaler PSU
In 800 W to 3 kW server and hyperscaler PSU designs targeting 80 PLUS Titanium efficiency, the IGLT65R035D2ATMA1 enables high-density LLC and PFC topologies that meet stringent efficiency and power-density targets. The GaN transistor's low Qg × Rds(on) figure of merit (FOM) reduces switching losses by 30-50% versus silicon superjunction MOSFETs at 100 kHz+, allowing engineers to shrink magnetics and bulk capacitance. The 47 A drain current and 650 V rating suit 380-400 V intermediate bus architectures, while the top-cooled HDSOP-16-8 package simplifies thermal integration into 1U and CRPS form factors. The device's robust gate structure tolerates standard 0-12 V gate-drive without negative bias, simplifying PSU controller design.
推荐
Telecom Rectifier Module
Telecom rectifier modules operating from 48 V or -48 V battery plants require high-efficiency front-end PFC and isolated DC-DC stages; the IGLT65R035D2ATMA1 fits the PFC side of these designs. Its 650 V drain-source rating handles universal AC input (90-264 VAC) rectified to 400 VDC, while its high switching frequency capability shrinks the PFC inductor and EMI filter footprint - critical for compact 1U telecom shelves. The CoolGaN™ G5 family is qualified to Infineon's industrial reliability standards (JEDEC-qualified, with H3TRB and HTGB data available in the datasheet), supporting long-life telecom deployments. The top-side cooled PG-HDSOP-16-8 package enables cold-plate attachment in sealed rectifier enclosures.
推荐
Solar Inverter DC-DC Stage
In string-inverter and microinverter designs, the IGLT65R035D2ATMA1 supports high-frequency DC-DC boost stages converting 30-60 VDC PV panel output to 380-400 VDC intermediate bus for grid-tie inversion. Its 650 V rating and 47 A current handling enable 2-3 kW per-phase inverter stages with high conversion efficiency, maximising energy harvest from PV strings. The GaN HEMT's zero Qrr behaviour eliminates reverse-conduction losses in bidirectional converter topologies, simplifying the inverter topology. The top-side cooled package allows direct mounting to inverter heatsinks or cold plates, supporting IP67-sealed outdoor enclosures common in residential and commercial solar installations.
推荐
Industrial Motor Drive
Industrial variable-frequency drives (VFDs) and servo amplifiers benefit from the IGLT65R035D2ATMA1's 650 V rating and high switching speed in the inverter output stage. Driving 400 VAC three-phase motors at PWM frequencies of 50-100 kHz, the CoolGaN™ G5 transistor reduces switching losses versus silicon IGBTs by up to 60%, enabling smaller heatsinks, higher torque bandwidth, and reduced audible noise. The 47 A continuous current rating supports drives rated up to ~15 kW when paralleled per phase leg. The robust gate structure tolerates the high dV/dt and motor-cable reflections typical of long-cable motor installations, while the top-cooled PG-HDSOP-16-8 package simplifies thermal integration into sealed industrial enclosures.
推荐
EV On-Board Charger (OBC)
In 6.6 kW to 22 kW EV on-board chargers, the IGLT65R035D2ATMA1 enables compact totem-pole PFC and CLLC resonant DC-DC stages that meet automotive efficiency and power-density targets. Two paralleled devices per switch position support 11 kW OBC designs, while the 650 V rating handles rectified 400 VAC PFC output. The CoolGaN™ G5 family offers higher reliability than silicon at elevated junction temperatures, with Tj up to 150°C continuous - critical for under-hood automotive environments. The top-side cooled PG-HDSOP-16-8 package allows direct cold-plate attachment in liquid-cooled OBC enclosures, while the Kelvin-source pin minimises gate-loop inductance for clean switching at >100 V/ns dV/dt.
推荐
推荐产品汇总
工程参考数据： IGLT65R035D2ATMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IGLT65R035D2 | IGLR70R200D2SXUMA1 | IMLT65R040M2HXTMA1 | IDL04G65C5XUMA2 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-HDSOP-16-8 (top-cooled) | PG-HDSOP-16-8 (top-cooled) - same | PG-HDSOP-16-8 - same | PG-HDSOP-16-8 - same | PG-HDSOP-16-8 - same |
| Drain-Source Voltage (Vdss) | 650 V | 650 V | 700 V | 650 V | 650 V (SiC diode) |
| On-Resistance Class (Rds(on)) | 35 mohm-class | 35 mohm-class | 200 mohm-class | 40 mohm-class | N/A |
| Technology Family | CoolGaN™ G5 TOLT | CoolGaN™ G5 TOLT | CoolGaN™ G5 TOLT | CoolGaN™ Gen2 M2 | CoolSiC™ Schottky diode |
| Cooling Configuration | Top-side cooled | Top-side cooled | Top-side cooled | Top-side cooled | Top-side cooled |
关键差异点
- Top-side cooled package for direct cold-plate attachment （对比 Bottom-cooled DFN GaN devices)
- Zero reverse-recovery charge (Qrr = 0) （对比 Silicon superjunction MOSFETs (e.g. IPW60R037P7XKSA1))
- 650 V rating with 35 mohm-class Rds(on) （对比 Higher-Rds(on) CoolGaN™ G5 variants (e.g. 200 mohm class))
设计说明
The PG-HDSOP-16-8 package is top-side cooled (TOLT configuration). Solder the exposed thermal pad on the top surface directly to a heatsink or cold plate with high-conductivity thermal-interface material (>5 W/mK). Estimated: at 100 W total power dissipation per device and a junction-to-case thermal resistance in the ~1 C/W range, the case temperature must be held below 125°C to keep Tj under the 150°C maximum. Use multiple thermal vias in the PCB layers beneath the package's bottom-side pads to provide auxiliary bottom-side heat extraction if needed.
Minimise the gate-drive loop inductance by routing the gate and Kelvin-source traces as a tightly-coupled differential pair directly to the gate-driver IC output. Keep this loop area below 0.5 cm² to suppress ringing at high dV/dt (>100 V/ns). Place a small gate resistor (typically 5-15 ohm) immediately at the gate pin to dampen residual ringing; this resistor also limits peak gate current during fast dv/dt events. The drain and source power-loop inductance should be minimised using wide copper pours and minimal trace length.
Do not drive the gate above the absolute maximum rating of +20 V; the recommended gate-drive is 0 V (off) to +12 V (on) without negative bias. Although the GaN HEMT has zero Qrr, the device body diode does conduct during dead-time - size the dead-time to 50-100 ns in half-bridge configurations to balance efficiency and cross-conduction losses. Avoid probing the gate with long ground-leaded oscilloscope probes, which add inductance and corrupt switching waveforms; use a low-inductance coax-tip probe or the probe-connection pad provided on Infineon's evaluation boards.
合规信息
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified; for automotive applications evaluate Infineon automotive-grade CoolGaN™ parts. Halogen-free per Infineon environmental compliance documentation.
