IPB027N10N3GATMA1 vs IPB038N12N3GATMA1 对比
详细并排对比 IPB027N10N3GATMA1 出自 Infineon 和 IPB038N12N3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPB027N10N3GATMA1 | IPB038N12N3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.62 | $1.78 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 3 (Trench MOSFET) | OptiMOS trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25°C | 120 A | — |
| Power Dissipation (PD) at TC=25°C | 300 W | — |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mΩ | — |
| On-Resistance RDS(on) typical at VGS=10V | 2.7 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical and min/max VGS(th) values] | — |
| 工作温度范围 | -55°C to +175°C (TJ) | -55C to +175C (junction) |
| 封装 | PG-TO263-3 (D2PAK) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Thermal Resistance Junction-to-Case (RθJC) | [DATA_NEEDED: exact °C/W value] | — |
| Single Pulse Avalanche Energy (EAS) | [DATA_NEEDED: datasheet EAS figure] | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg at VGS=10V] | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 120V |
| Drain-Source Voltage (Vdss) | — | 120 V |
| Continuous Drain Current (Id) @ Tc | — | 120 A |
| Power Dissipation (Pd) @ Tc | — | 300 W |
| On-State Resistance (Rds(on)) | — | 3.8 mOhm (typical) |
| 封装 / 外壳 | — | PG-TO263-3 (D2PAK) |
| Gate Drive | — | Logic-level compatible |
| Standard Package Quantity | — | 1000 (Tape & Reel) |
| Avalanche Rated | — | Yes |