IPB027N10N3GATMA1 vs IPD046N08N5ATMA1 对比
详细并排对比 IPB027N10N3GATMA1 出自 Infineon 和 IPD046N08N5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPB027N10N3GATMA1 | IPD046N08N5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.62 | $0.78 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 3 (Trench MOSFET) | OptiMOS™ 5 trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25°C | 120 A | — |
| Power Dissipation (PD) at TC=25°C | 300 W | — |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mΩ | — |
| On-Resistance RDS(on) typical at VGS=10V | 2.7 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical and min/max VGS(th) values] | — |
| 工作温度范围 | -55°C to +175°C (TJ) | — |
| 封装 | PG-TO263-3 (D2PAK) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Thermal Resistance Junction-to-Case (RθJC) | [DATA_NEEDED: exact °C/W value] | — |
| Single Pulse Avalanche Energy (EAS) | [DATA_NEEDED: datasheet EAS figure] | — |
| RoHS 状态 | Compliant | ROHS3 Compliant |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | 1 (per JEDEC J-STD-020) |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg at VGS=10V] | — |
| Manufacturer | — | Infineon Technologies |
| Product Series | — | OptiMOS™ 5 80V |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 80 V |
| Continuous Drain Current (ID) at Tc=25°C | — | 90 A |
| On-Resistance RDS(on) Max at VGS=10V | — | 4.6 mΩ |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Power Dissipation (PD) at Tc=25°C | — | 125 W |
| 工作结温范围 | — | -55 °C to +175 °C |
| 封装 / 外壳 | — | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) |
| Configuration | — | Single N-channel, 3-pin (Gate / Drain tab / Source) |