IPB35N10S3L26ATMA2 vs IAUC60N10S5L110ATMA1 对比
详细并排对比 IPB35N10S3L26ATMA2 出自 Infineon 和 IAUC60N10S5L110ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPB35N10S3L26ATMA2 | IAUC60N10S5L110ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.48 | $0.66 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS Power-Transistor | — |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) at Tc | 35 A | — |
| 脉冲漏极电流 | 180 A | — |
| Power Dissipation (Pd) at Tc | 71 W | — |
| RDS(on) (typical) | 26.3 mOhm | — |
| 封装 | PG-TO263-3-2 (D2PAK) | PG-TDSON-8-33 (TDSON-8 Single) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C | [DATA_NEEDED: min/max operating temperature] |
| 引脚数 | 3 | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| RoHS 状态 | Compliant | — |
| Automotive Qualified | Yes (per Infineon product page classification) | — |
| Series | — | OptiMOS™-5 |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>, Tc) | — | 60 A |
| Power Dissipation (P<sub>D</sub>, Tc) | — | 88 W |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | — | 11 mΩ |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | 1.2 V |
| Gate-Source Voltage (V<sub>GS</sub>) Max | — | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Q<sub>G</sub>) | — | [DATA_NEEDED: Qg at specified Vgs] |
| Avalanche Energy (E<sub>AS</sub>) | — | [DATA_NEEDED: single-pulse avalanche energy] |
| Lead-Free / RoHS | — | Yes (RoHS compliant per LCSC listing) |
| Packing Code | — | ATMA1 (Tape & Reel) |
| MSL 等级 | — | 1 (per LCSC datasheet snippet) |
| 无卤 | — | Yes (per Infineon product classification) |
| Customer Info / FGR | — | J52 (per Infineon product data) |