IPB90N06S4L04ATMA2 vs IRF5210PBF 对比
详细并排对比 IPB90N06S4L04ATMA2 出自 Infineon 和 IRF5210PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPB90N06S4L04ATMA2 | IRF5210PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.94 | $0.82 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPB90N06S4L04ATMA2 | — |
| Technology | OptiMOS T2, N-channel enhancement mode | HEXFET (Fifth Generation) |
| Drain-Source Voltage (V_DSS) | 60 V | — |
| Continuous Drain Current (I_D, Tc) | 90 A | — |
| Pulsed Drain Current (I_D,pulse) | 360 A | — |
| Power Dissipation (P_D, Tc) | 150 W | — |
| On-State Resistance R_DS(on) (typ @ VGS=10V) | 3.4 mΩ | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th)] | — |
| Gate-Source Voltage (V_GS) | ±20 V | — |
| 工作温度范围 | -55 °C to +175 °C | -55 C to +175 C (junction) |
| 封装 | PG-TO263-3-2 (D2PAK) | TO-220AB (through-hole) |
| 安装类型 | Surface Mount | Through Hole |
| MSL 等级 | MSL1 (unlimited floor life) | — |
| Peak Reflow Temperature | 260 °C | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Avalanche Tested | 100% avalanche-tested | — |
| RoHS / Halogen-Free | Yes (Green Product) | — |
| 晶体管类型 | — | P-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | -100 V |
| Continuous Drain Current (Id) at Tc | — | -40 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate-Source Threshold Voltage (Vgs(th)) | — | -2 V to -4 V (typical -2 V) |
| On-Resistance Rds(on) at Vgs=-10V | — | 60 milliohms |
| Total Gate Charge (Qg) | — | 120 nC |
| Power Dissipation (Pd) at Tc | — | 200 W |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Tab Connection | — | Electrically tied to Drain |
| Pin Configuration | — | Gate / Drain (tab) / Source (G-D-S, front view) |