IPB90N06S4L04ATMA2 vs IRF5210PBF 比較
詳細な並列比較: IPB90N06S4L04ATMA2 メーカー: Infineon および IRF5210PBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPB90N06S4L04ATMA2 | IRF5210PBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.94 | $0.82 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPB90N06S4L04ATMA2 | — |
| Technology | OptiMOS T2, N-channel enhancement mode | HEXFET (Fifth Generation) |
| Drain-Source Voltage (V_DSS) | 60 V | — |
| Continuous Drain Current (I_D, Tc) | 90 A | — |
| Pulsed Drain Current (I_D,pulse) | 360 A | — |
| Power Dissipation (P_D, Tc) | 150 W | — |
| On-State Resistance R_DS(on) (typ @ VGS=10V) | 3.4 mΩ | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th)] | — |
| Gate-Source Voltage (V_GS) | ±20 V | — |
| 動作温度範囲 | -55 °C to +175 °C | -55 C to +175 C (junction) |
| パッケージ | PG-TO263-3-2 (D2PAK) | TO-220AB (through-hole) |
| 実装タイプ | Surface Mount | Through Hole |
| MSLレベル | MSL1 (unlimited floor life) | — |
| Peak Reflow Temperature | 260 °C | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Avalanche Tested | 100% avalanche-tested | — |
| RoHS / Halogen-Free | Yes (Green Product) | — |
| トランジスタタイプ | — | P-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | -100 V |
| Continuous Drain Current (Id) at Tc | — | -40 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate-Source Threshold Voltage (Vgs(th)) | — | -2 V to -4 V (typical -2 V) |
| On-Resistance Rds(on) at Vgs=-10V | — | 60 milliohms |
| Total Gate Charge (Qg) | — | 120 nC |
| Power Dissipation (Pd) at Tc | — | 200 W |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Tab Connection | — | Electrically tied to Drain |
| Pin Configuration | — | Gate / Drain (tab) / Source (G-D-S, front view) |