IPB90N06S4L04ATMA2 vs IRF5210PBF 비교
다음의 상세 나란히 비교: IPB90N06S4L04ATMA2 제조: Infineon 및 IRF5210PBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPB90N06S4L04ATMA2 | IRF5210PBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.94 | $0.82 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPB90N06S4L04ATMA2 | — |
| Technology | OptiMOS T2, N-channel enhancement mode | HEXFET (Fifth Generation) |
| Drain-Source Voltage (V_DSS) | 60 V | — |
| Continuous Drain Current (I_D, Tc) | 90 A | — |
| Pulsed Drain Current (I_D,pulse) | 360 A | — |
| Power Dissipation (P_D, Tc) | 150 W | — |
| On-State Resistance R_DS(on) (typ @ VGS=10V) | 3.4 mΩ | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th)] | — |
| Gate-Source Voltage (V_GS) | ±20 V | — |
| 동작 온도 범위 | -55 °C to +175 °C | -55 C to +175 C (junction) |
| 패키지 | PG-TO263-3-2 (D2PAK) | TO-220AB (through-hole) |
| 실장 유형 | Surface Mount | Through Hole |
| MSL 레벨 | MSL1 (unlimited floor life) | — |
| Peak Reflow Temperature | 260 °C | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Avalanche Tested | 100% avalanche-tested | — |
| RoHS / Halogen-Free | Yes (Green Product) | — |
| 트랜지스터 유형 | — | P-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | -100 V |
| Continuous Drain Current (Id) at Tc | — | -40 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate-Source Threshold Voltage (Vgs(th)) | — | -2 V to -4 V (typical -2 V) |
| On-Resistance Rds(on) at Vgs=-10V | — | 60 milliohms |
| Total Gate Charge (Qg) | — | 120 nC |
| Power Dissipation (Pd) at Tc | — | 200 W |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Tab Connection | — | Electrically tied to Drain |
| Pin Configuration | — | Gate / Drain (tab) / Source (G-D-S, front view) |