IPC70N04S5L4R2ATMA1 vs IPB120N04S402ATMA1 对比

详细并排对比 IPC70N04S5L4R2ATMA1 出自 Infineon 和 IPB120N04S402ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPC70N04S5L4R2ATMA1 IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon

IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon

IPC70N04S5L4R2ATMA1 ✓ 量产中
Infineon
IPB120N04S402ATMA1 IPB120N04S402ATMA1 - 40V 120A OptiMOS-T2 N-FET D2PAK | Infineon

IPB120N04S402ATMA1 - 40V 120A OptiMOS-T2 N-FET D2PAK | Infineon

IPB120N04S402ATMA1 ✓ 量产中

规格对比

参数 IPC70N04S5L4R2ATMA1 IPB120N04S402ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.78 $1.85
FET Type N-Channel N-Channel, Enhancement Mode
Technology MOSFET (Metal Oxide) —
Drain to Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ Tc=25°C 70 A —
Power Dissipation (Pd) @ Tc=25°C 50 W —
R_DS(on) Max @ Vgs=10V 4.2 mΩ (typ) —
Gate Threshold (Vgs(th)) Logic Level (4.5 V max Rds On, Min Rds On) —
Drive Voltage (Max Rds On, Min Rds On) 4.5 V —
封装 PG-TDSON-8-34 (Surface Mount) PG-TO263-3 (D2PAK)
Operating Temperature (Tj) -55°C to +175°C —
安装类型 Surface Mount Surface Mount
MSL 等级 MSL1 (up to 260°C peak reflow) —
Automotive Qualification AEC-Q101 AEC-Q101
Avalanche Tested 100% (60 A production test) —
RoHS 状态 Compliant (Green Product) —
Configuration Single with Built-in Diode —
Case Connection DRAIN —
Manufacturer — Infineon Technologies
Product Family — OptiMOS-T2
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, TC) — 120 A
Power Dissipation (PD, TC) — 158 W
RDS(on) (typ @ VGS=10 V) — 1.8 mΩ
引脚数量 — 3 (2 + Tab)
工作温度范围 — -55 °C to +175 °C
Maximum Junction Temperature — 175 °C
Gate Threshold Voltage (VGS(th), typ) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg, typ) — [DATA_NEEDED: total gate charge]
Avalanche Energy Rating — 100% Avalanche Tested
湿敏等级(MSL) — MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow)
RoHS Compliance — Green Product (RoHS compliant)

数据手册与资源

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