IPB120N04S402ATMA1 - 40V 120A OptiMOS-T2 N-FET D2PAK | Infineon
料号： IPB120N04S402ATMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $3.12 | $3.12 |
| 10 | $2.78 | $27.80 |
| 100 | $2.41 | $241.00 |
| 500 | $2.1 | $1,050.00 |
| 1,000 | $1.85 | $1,850.00 |
IPB120N04S402ATMA1 概述
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to conduct current between source and drain. MOSFETs sit within the discrete semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor -> active component. Within power conversion systems, a low-RDS(on) N-channel MOSFET like the IPB120N04S402ATMA1 enables high-efficiency synchronous rectification in DC-DC converters, high-side/low-side motor drive half-bridges, and OR-ing/redundant power paths where conduction losses directly determine system efficiency.
Key features of the IPB120N04S402ATMA1 include the automotive-grade OptiMOS-T2 silicon platform with what Infineon describes as the world's lowest RDS(on) at 40 V and highest current capability in its class, plus 100% avalanche-tested ruggedness, low switching and conduction losses for highest thermal efficiency, and a robust package design. The D2PAK (PG-TO263-3) footprint provides a low thermal-resistance path via the exposed tab, supporting 158 W dissipation at TC and AEC-Q101 automotive qualification.
Architecturally, the device is a trench-gate N-channel enhancement-mode MOSFET, optimized for very low on-state resistance and high pulse-current handling. AEC-Q101 qualification, MSL1 moisture sensitivity up to 260 °C peak reflow, and a 175 °C maximum operating junction temperature qualify it for under-hood automotive environments. The combination of high current rating and low RDS(on) reduces conduction losses and simplifies thermal design in high-power switching.
Typical applications include EPS (electronic power steering) motor control in automotive systems, DC-DC converter synchronous rectification, high-current load switches in 12 V/24 V automotive buses, battery protection / reverse-polarity protection switches, and motor drive half-bridges for pumps, fans, and e-compressors. The 40 V rating also covers 24 V industrial bus systems with adequate transient margin.
When designing with this part, ensure the gate driver can source/sink sufficient peak current (often several hundred mA to several amps) to charge and discharge the gate quickly, minimizing switching loss. Layout must keep the high-current loop (drain-source) area small to limit parasitic inductance that can cause VDS overshoot and ringing. Use a low-impedance gate-drive return path to prevent parasitic turn-on from dv/dt.
This page synthesizes distributor pricing from DigiKey/Mouser/Octopart, drop-in compatible same-package alternatives, and practical thermal/layout design notes not aggregated in the manufacturer datasheet.
直接替换替代料： IPB120N04S402ATMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IPB120N04S402ATMA1 （相同外形与封装尺寸） ——差异在于 Package, MSL Level, Technology, FET Type, Operating Temperature Range.
快速对比工具——选择替代料号进行并排对比：
IPB100N04S4H2ATMA1
✅ 直接替换✓ 有现货
$1.42 / 个
查看数据手册 →IPC100N04S5L1R5ATMA1
✅ 直接替换✓ 有现货
$1.18 / 个
查看数据手册 →IPC70N04S5L4R2ATMA1
✅ 直接替换✓ 有现货
$0.78 / 个
查看数据手册 →BSC076N04NDATMA1
✅ 直接替换✓ 有现货
$0.82 / 个
查看数据手册 →IPD50N04S408ATMA1
✅ 直接替换✓ 有现货
$0.69 / 个
查看数据手册 →BSC019N04LSTATMA1
✅ 直接替换✓ 有现货
$1.21 / 个
查看数据手册 →IPB120N04S402ATMA1 最大额定值与电气特性
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS-T2 |
| FET Type | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, TC) | 120 A |
| Power Dissipation (PD, TC) | 158 W |
| RDS(on) (typ @ VGS=10 V) | 1.8 mΩ |
| 封装 | PG-TO263-3 (D2PAK) |
| 安装类型 | Surface Mount |
| 引脚数量 | 3 (2 + Tab) |
| 工作温度范围 | -55 °C to +175 °C |
| Maximum Junction Temperature | 175 °C |
| Avalanche Energy Rating | 100% Avalanche Tested |
| 湿敏等级（MSL） | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 |
| RoHS Compliance | Green Product (RoHS compliant) |
IPB120N04S402ATMA1 引脚配置
| 引脚 1 | Gate (G) — Gate drive input; voltage-controlled terminal that controls drain-source conduction |
| 引脚 2 | Drain (D) — Drain terminal; internally connected to the metal mounting tab; high-current path |
| 引脚 3 | Source (S) — Source terminal; reference for gate drive voltage and current return path |
| 引脚 Tab | Drain (D) — Metal mounting tab; internally tied to pin 2 (Drain); must be soldered to PCB copper pour for thermal dissipation |
安全工作区 (SOA) - DC
典型应用
IPB120N04S402ATMA1 适用于 6 应用s: Automotive Electronic Power Steering (EPS) Motor Control, DC-DC Converter Synchronous Rectification, High-Current Automotive Load Switch (12 V/24 V Bus), Battery Protection / Reverse-Polarity Protection Switch, Brushless DC (BLDC) Motor Drive Half-Bridge, Industrial 24 V Bus Switching / Hot-Swap.
Automotive Electronic Power Steering (EPS) Motor Control
The IPB120N04S402ATMA1 is purpose-built for automotive EPS motor control, as called out on the Infineon product page. The 40 V VDS rating covers 12 V automotive bus transients with margin, the 120 A continuous drain current at TC supports the high inrush and torque demands of brushless DC EPS motors, and the 1.8 mΩ typical RDS(on) at VGS = 10 V minimizes conduction loss in the half-bridge switches. AEC-Q101 qualification, 175 °C max junction temperature, and MSL1 / 260 °C peak reflow tolerance allow direct use in under-hood ECU modules where automotive reliability standards apply.
推荐
DC-DC Converter Synchronous Rectification
In 12 V-to-low-voltage buck converters, the IPB120N04S402ATMA1 serves as the low-side synchronous rectifier MOSFET, where its 1.8 mΩ RDS(on) and 120 A current rating deliver high efficiency at heavy loads. The D2PAK package offers low thermal resistance for sustained high-current operation, while the OptiMOS-T2 silicon platform provides a good balance of low gate charge and low RDS(on). Placement should minimize the high-current drain-source loop area to limit parasitic inductance and switching-related ringing.
推荐
High-Current Automotive Load Switch (12 V/24 V Bus)
The IPB120N04S402ATMA1 functions as a solid-state high-side or low-side load switch on 12 V or 24 V automotive electrical buses, controlling loads such as high-power lighting, PTC heaters, blowers, or seat heaters. Its 120 A continuous current capability handles peak inrush from capacitive or inductive loads, and the 40 V rating tolerates load-dump transients up to 35 V typical on 12 V systems. The AEC-Q101 qualification and automotive-grade temperature range make it suitable for under-hood and body-control applications.
推荐
Battery Protection / Reverse-Polarity Protection Switch
Used as the main disconnect or reverse-polarity blocking switch in 12 V / 24 V battery management systems, the IPB120N04S402ATMA1's 40 V VDS, 120 A current handling, and 100% avalanche-tested ruggedness allow the MOSFET to absorb inductive kickback from motors and solenoids during switching events. The very low RDS(on) reduces continuous voltage drop across the protection switch, preserving system efficiency. The D2PAK package supports the high dissipation encountered during sustained fault-current events.
推荐
Brushless DC (BLDC) Motor Drive Half-Bridge
In three-phase BLDC motor drive inverters, the IPB120N04S402ATMA1 forms the high-side and low-side switches of each half-bridge phase leg, driving motors in pumps, fans, e-compressors, and small EV traction auxiliaries. The 120 A current rating supports the high torque-per-ampere demands of BLDC commutation, and the 40 V VDS provides comfortable margin for 12 V and 24 V bus architectures. The exposed-tab D2PAK package enables direct PCB copper heatsinking for sustained switching currents at high PWM frequencies.
推荐
Industrial 24 V Bus Switching / Hot-Swap
Beyond automotive, the IPB120N04S402ATMA1 is well-suited to industrial 24 V bus hot-swap and load-switching applications, where the 40 V VDS rating tolerates 24 V nominal with transient headroom, and the 120 A current capability handles inrush from large capacitive loads or motor start-up. The AEC-Q101 stress testing provides additional margin in industrial environments, and the 100% avalanche rating ensures robust behavior during inductive switching events. The D2PAK package supports high sustained dissipation in industrial chassis designs.
推荐
推荐产品汇总
工程参考数据： IPB120N04S402ATMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IPB100N04S4H2ATMA1 | IPC100N04S5L1R5ATMA1 | IPC70N04S5L4R2ATMA1 | BSC076N04NDATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) - same | PG-TO263-7 (D2PAK-7) - same family | PG-TO263-7 (D2PAK-7) - same family | PG-TDSON-8 (D2PAK-compatible footprint adapter) |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V |
| Continuous Drain Current (ID at TC) | 120 A | 100 A (-17%) | 100 A (-17%) | 70 A (-42%) | ~120 A class |
| RDS(on) (typ @ VGS=10V) | 1.8 mΩ | ~2.0 mΩ | 1.5 mΩ (lower) | 4.2 mΩ | 0.76 mΩ (much lower) |
| Power Dissipation (PD at TC) | 158 W | ~150 W | ~139 W | ~94 W | ~156 W |
| Technology Generation | OptiMOS-T2 | OptiMOS-T2 | OptiMOS-5 (newer) | OptiMOS-5 (newer) | OptiMOS |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
关键差异点
- Highest current capability in the OptiMOS-T2 40 V family （对比 IPB100N04S4H2ATMA1)
- Automotive-grade qualification with MSL1 / 260 °C peak reflow （对比 IPC100N04S5L1R5ATMA1)
- Lowest RDS(on) at 40 V in its D2PAK class （对比 IPC70N04S5L4R2ATMA1)
设计说明
Estimated: At ID = 100 A and RDS(on) = 1.8 mΩ, conduction loss is P = I²·R = 100² × 0.0018 ≈ 18 W. The D2PAK package has a typical theta_JC of ~0.8 °C/W and theta_JA of ~40 °C/W on a 1 sq-inch copper pour. With 18 W dissipation, junction temperature rise above ambient is approximately 18 × 40 = 720 °C on the reference footprint, which exceeds the 175 °C maximum. Therefore, at 100 A continuous the design MUST use a much larger copper pour (≥ 4 sq inches) or an external heatsink to keep TJ below 150 °C. Verify with the manufacturer SOA curves and your specific PCB layout.
Minimize the high-current drain-source loop area on the PCB to limit parasitic inductance that causes VDS overshoot and ringing during switching. Place the input bypass capacitor as close as possible to the drain and source terminals, and use a wide, short copper trace for the drain-source power path. For the gate drive, keep the gate-source loop compact and use a low-impedance gate-drive return path directly to the source pin to avoid parasitic turn-on from high dv/dt transitions.
Do not exceed the VGS maximum rating of ±20 V (typical for OptiMOS-T2). Use a gate-source resistor (typically 10 kΩ) to hold the MOSFET off when the gate driver is disconnected or tri-stated. Ensure the gate driver can source/sink sufficient peak current (≥ 1 A recommended for fast switching of this die size) to achieve the desired switching speed. Add a small gate-source resistor (10-100 Ω) to dampen ringing on the gate drive trace if EMI is a concern.
合规信息
AEC-Q101 qualified per Infineon product page (automotive grade). MSL1 per JEDEC J-STD-020 with 260 °C peak reflow tolerance. Green Product (RoHS compliant) per Infineon datasheet. 175 °C maximum operating junction temperature.
