IPD082N10N3GATMA1 vs BSC0902NSIATMA1 对比

详细并排对比 IPD082N10N3GATMA1 出自 Infineon 和 BSC0902NSIATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IPD082N10N3GATMA1 BSC0902NSIATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.14 $0.32
Part Number IPD082N10N3GATMA1 —
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 3 (Trench N-Channel) —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) @ Tc=25°C 80 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM]
On-Resistance RDS(on) max @ VGS=10 V 8.2 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD) @ Tc=25°C 125 W —
工作结温 -55°C to +175°C —
封装 / 外壳 PG-TO252-3 (DPAK), surface mount —
安装类型 Surface Mount Surface Mount
引脚数量 3 (Gate, Drain, Source) —
RoHS 状态 Compliant Compliant
Automotive Qualified (AEC-Q101) Not applicable (industrial/consumer grade) —
Lead-Free Yes Yes
MSL 等级 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Product Family — OptiMOS 30V
Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TA=25C — 23 A
Continuous Drain Current (ID) at TC=25C — 100 A
On-State Resistance RDS(on) Max at VGS=10V — 2.8 mOhm
Gate Charge QG(0V..10V) — 24 nC
Output Charge QOSS — 17 nC
Power Dissipation (TA) — 2.5 W
Power Dissipation (TC) — 48 W
工作温度范围 — -55C to +150C (junction)
封装 — PG-TDSON-8-6 (TDSON-8)
Built-in Diode — Yes (single with built-in diode)
无卤 — Yes

数据手册与资源

浏览全部产品 创建 BOM 获取报价