IPD082N10N3GATMA1 vs BSC0902NSIATMA1 Comparison
Detailed side-by-side comparison of IPD082N10N3GATMA1 by Infineon and BSC0902NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 β ActiveInfineon
BSC0902NSIATMA1 - 30V N-Ch OptiMOS MOSFET, PG-TDSON-8 | Infineon
BSC0902NSIATMA1 β ActiveSpecification Comparison
| Parameter | IPD082N10N3GATMA1 | BSC0902NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.14 | $0.32 |
| Part Number | IPD082N10N3GATMA1 | β |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 3 (Trench N-Channel) | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) @ Tc=25Β°C | 80 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=10 V | 8.2 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | β |
| Power Dissipation (PD) @ Tc=25Β°C | 125 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Package / Case | PG-TO252-3 (DPAK), surface mount | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) | β |
| RoHS Status | Compliant | Compliant |
| Automotive Qualified (AEC-Q101) | Not applicable (industrial/consumer grade) | β |
| Lead-Free | Yes | Yes |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Product Family | β | OptiMOS 30V |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 30 V |
| Gate-Source Voltage (VGS) Max | β | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TA=25C | β | 23 A |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| On-State Resistance RDS(on) Max at VGS=10V | β | 2.8 mOhm |
| Gate Charge QG(0V..10V) | β | 24 nC |
| Output Charge QOSS | β | 17 nC |
| Power Dissipation (TA) | β | 2.5 W |
| Power Dissipation (TC) | β | 48 W |
| Operating Temperature Range | β | -55C to +150C (junction) |
| Package | β | PG-TDSON-8-6 (TDSON-8) |
| Built-in Diode | β | Yes (single with built-in diode) |
| Halogen-Free | β | Yes |