IPD082N10N3GATMA1 vs IPD70N10S312ATMA1 对比

详细并排对比 IPD082N10N3GATMA1 出自 Infineon 和 IPD70N10S312ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPD70N10S312ATMA1 IPD70N10S312ATMA1 - 100V 70A N-Channel MOSFET | TXF | TO-252

IPD70N10S312ATMA1 - 100V 70A N-Channel MOSFET | TXF | TO-252

IPD70N10S312ATMA1 ✓ 量产中

规格对比

参数 IPD082N10N3GATMA1 IPD70N10S312ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.14 $0.92
Part Number IPD082N10N3GATMA1 IPD70N10S312ATMA1
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Technology OptiMOS 3 (Trench N-Channel) —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) @ Tc=25°C 80 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 180 A
On-Resistance RDS(on) max @ VGS=10 V 8.2 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/max] [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] 65 nC @ 10 V
Power Dissipation (PD) @ Tc=25°C 125 W —
工作结温 -55°C to +175°C —
封装 / 外壳 PG-TO252-3 (DPAK), surface mount —
安装类型 Surface Mount Surface Mount
引脚数量 3 (Gate, Drain, Source) —
RoHS 状态 Compliant —
Automotive Qualified (AEC-Q101) Not applicable (industrial/consumer grade) —
Lead-Free Yes —
MSL 等级 1 (per JEDEC J-STD-020) MSL1 (up to 260 °C peak reflow)
Product Family — OptiMOS-T Power-Transistor
FET Type — N-Channel, Enhancement Mode
Continuous Drain Current (ID, Tc) — 70 A
Power Dissipation (PD, Tc) — 125 W
On-State Resistance (RDS(on)) — 11.1 mΩ @ 70 A, 10 V VGS
Gate-Source Voltage (VGS) — ±20 V
Input Capacitance (Ciss) — 4355 pF @ 25 V
Operating Temperature (TJ) — -55 °C to +175 °C
封装 — PG-TO252-3-11 (DPAK, 2 Leads + Tab)
Automotive Qualification — AEC-Q101
Avalanche Tested — 100 % (per datasheet)
RoHS Compliance — Green product, RoHS compliant

数据手册与资源

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