IPD30N06S2L13ATMA4 vs IPD90N06S407ATMA2 对比

详细并排对比 IPD30N06S2L13ATMA4 出自 Infineon 和 IPD90N06S407ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPD30N06S2L13ATMA4 IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon

IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon

IPD30N06S2L13ATMA4 ✓ 量产中
Infineon
IPD90N06S407ATMA2 IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 - 60V 90A N-Ch MOSFET | Infineon

IPD90N06S407ATMA2 ✓ 量产中

规格对比

参数 IPD30N06S2L13ATMA4 IPD90N06S407ATMA2
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.48 $0.84
Manufacturer Infineon Technologies —
Part Family OptiMOS —
Channel Type N-Channel —
Mode Enhancement —
Drain-Source Voltage (Vds) 55 V —
Continuous Drain Current (Id) 30 A (Tc) —
Power Dissipation (Pd) 136 W (Tc) —
封装 PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK)
安装类型 Surface Mount Surface Mount
工作温度 -55 °C to +175 °C (Tj) —
Automotive Qualification AEC-Q101 qualified AEC-Q101 Qualified
MSL (Moisture Sensitivity Level) MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) MSL1 (up to 260 C peak reflow)
Lead-Free / RoHS Yes (Green Package) Yes (Green Product)
Avalanche Tested 100 % production-tested —
Technology Planar (OptiMOS) —
On-State Resistance (Rds(on)) [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] —
Gate-Source Threshold (Vgs(th)) Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) —
Total Gate Charge (Qg) [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typ at Vds=25V] —
Diode Reverse Recovery (trr) [DATA_NEEDED: trr typ] —
引脚数量 3 (Drain tab + Gate + Source) —
Tape and Reel Packaging Yes (T&R per IEC 60286-3) —
FET Type — N-Channel Enhancement Mode
Drain-to-Source Voltage (V_DS) — 60 V
Continuous Drain Current (I_D at T_C) — 90 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
R_DS(on) Max at V_GS=10 V, I_D=90 A — 6.9 mOhm
Gate Threshold Voltage (V_GS(th)) — 4 V at 40 uA
Total Gate Charge (Q_G) at V_GS=10 V — 56 nC
Maximum Power Dissipation (P_D at T_C) — 79 W
工作结温 — -55 C to +175 C
Storage Temperature — [DATA_NEEDED: storage temperature range]
Avalanche Rating — 100% Avalanche Tested

数据手册与资源

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