IPD30N06S2L13ATMA4 vs IPD90N06S407ATMA2 Comparison
Detailed side-by-side comparison of IPD30N06S2L13ATMA4 by Infineon and IPD90N06S407ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N06S2L13ATMA4 β ActiveSpecification Comparison
| Parameter | IPD30N06S2L13ATMA4 | IPD90N06S407ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.84 |
| Manufacturer | Infineon Technologies | β |
| Part Family | OptiMOS | β |
| Channel Type | N-Channel | β |
| Mode | Enhancement | β |
| Drain-Source Voltage (Vds) | 55 V | β |
| Continuous Drain Current (Id) | 30 A (Tc) | β |
| Power Dissipation (Pd) | 136 W (Tc) | β |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 Β°C to +175 Β°C (Tj) | β |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 Qualified |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020, up to 260 Β°C peak reflow) | MSL1 (up to 260 C peak reflow) |
| Lead-Free / RoHS | Yes (Green Package) | Yes (Green Product) |
| Avalanche Tested | 100 % production-tested | β |
| Technology | Planar (OptiMOS) | β |
| On-State Resistance (Rds(on)) | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] | β |
| Gate-Source Threshold (Vgs(th)) | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ at Vds=25V] | β |
| Diode Reverse Recovery (trr) | [DATA_NEEDED: trr typ] | β |
| Pin Count | 3 (Drain tab + Gate + Source) | β |
| Tape and Reel Packaging | Yes (T&R per IEC 60286-3) | β |
| FET Type | β | N-Channel Enhancement Mode |
| Drain-to-Source Voltage (V_DS) | β | 60 V |
| Continuous Drain Current (I_D at T_C) | β | 90 A |
| Pulsed Drain Current (I_DM) | β | [DATA_NEEDED: pulsed drain current] |
| R_DS(on) Max at V_GS=10 V, I_D=90 A | β | 6.9 mOhm |
| Gate Threshold Voltage (V_GS(th)) | β | 4 V at 40 uA |
| Total Gate Charge (Q_G) at V_GS=10 V | β | 56 nC |
| Maximum Power Dissipation (P_D at T_C) | β | 79 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Storage Temperature | β | [DATA_NEEDED: storage temperature range] |
| Avalanche Rating | β | 100% Avalanche Tested |