IPD30N06S2L13ATMA4 vs IPD90N06S407ATMA2 비교
다음의 상세 나란히 비교: IPD30N06S2L13ATMA4 제조: Infineon 및 IPD90N06S407ATMA2 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPD30N06S2L13ATMA4 | IPD90N06S407ATMA2 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.48 | $0.84 |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS | — |
| Channel Type | N-Channel | — |
| Mode | Enhancement | — |
| Drain-Source Voltage (Vds) | 55 V | — |
| Continuous Drain Current (Id) | 30 A (Tc) | — |
| Power Dissipation (Pd) | 136 W (Tc) | — |
| 패키지 | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 | -55 °C to +175 °C (Tj) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 Qualified |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) | MSL1 (up to 260 C peak reflow) |
| Lead-Free / RoHS | Yes (Green Package) | Yes (Green Product) |
| Avalanche Tested | 100 % production-tested | — |
| Technology | Planar (OptiMOS) | — |
| On-State Resistance (Rds(on)) | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] | — |
| Gate-Source Threshold (Vgs(th)) | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ at Vds=25V] | — |
| Diode Reverse Recovery (trr) | [DATA_NEEDED: trr typ] | — |
| 핀 수 | 3 (Drain tab + Gate + Source) | — |
| Tape and Reel Packaging | Yes (T&R per IEC 60286-3) | — |
| FET Type | — | N-Channel Enhancement Mode |
| Drain-to-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D at T_C) | — | 90 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| R_DS(on) Max at V_GS=10 V, I_D=90 A | — | 6.9 mOhm |
| Gate Threshold Voltage (V_GS(th)) | — | 4 V at 40 uA |
| Total Gate Charge (Q_G) at V_GS=10 V | — | 56 nC |
| Maximum Power Dissipation (P_D at T_C) | — | 79 W |
| 동작 접합 온도 | — | -55 C to +175 C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Avalanche Rating | — | 100% Avalanche Tested |