IPD50N03S4L06ATMA1 vs IPG20N04S4L07ATMA1 对比

详细并排对比 IPD50N03S4L06ATMA1 出自 Infineon 和 IPG20N04S4L07ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPD50N03S4L06ATMA1 IPD50N03S4L06ATMA1 - 30V 50A N-Ch OptiMOS | Infineon

IPD50N03S4L06ATMA1 - 30V 50A N-Ch OptiMOS | Infineon

IPD50N03S4L06ATMA1 ✓ 量产中
Infineon
IPG20N04S4L07ATMA1 IPG20N04S4L07ATMA1 - 40V 20A Dual N-Ch MOSFET 7.2mΩ | Infineon

IPG20N04S4L07ATMA1 - 40V 20A Dual N-Ch MOSFET 7.2mΩ | Infineon

IPG20N04S4L07ATMA1 ✓ 量产中

规格对比

参数 IPD50N03S4L06ATMA1 IPG20N04S4L07ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.49 $1.65
FET Type N-Channel, Enhancement Mode 2x N-Channel (Dual, Independent)
Drain-Source Voltage (V_DS) 30 V —
Continuous Drain Current (I_D, Tc) 50 A —
On-State Resistance (R_DS(on) max) 5.5 mOhm at V_GS = 10 V —
Gate Threshold Voltage (V_GS(th) typ) 2.2 V —
Total Gate Charge (Q_g) 31 nC at V_GS = 10 V —
Input Capacitance (C_iss) 2.33 nF —
Output Capacitance (C_oss) 600 pF —
Reverse Transfer Capacitance (C_rss) 34 pF —
Power Dissipation (P_D) 56 W at Tc = 25 C —
工作结温 -55 C to +175 C -55°C to +175°C
封装 PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount PG-TDSON-8-4 (TDSON-8-4)
安装类型 Surface Mount Surface Mount
MSL 等级 MSL1 (up to 260 C peak reflow) MSL1 (per JEDEC J-STD-020, 260°C peak reflow)
Automotive Qualification AEC-Q101 —
Avalanche Rating 100% Avalanche Tested —
RoHS 状态 Compliant (Green Package) —
Manufacturer — Infineon Technologies
Series — OptiMOS™ T2
Drain-to-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) — 20 A
RDS(on) Max @ VGS=10V — 7.2 mΩ (typical)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge at VGS=10V]
Power Dissipation (PD) Max — 65 W
Logic-Level Gate Drive — Yes (4.5V VGS fully enhanced)
AEC-Q101 Qualification — Qualified
Avalanche Tested — 100% (per datasheet)
RoHS / Lead-Free — RoHS compliant, lead-free terminations

数据手册与资源

浏览全部产品 创建 BOM 获取报价