IPD50N03S4L06ATMA1 vs IPG20N04S4L07ATMA1 비교

다음의 상세 나란히 비교: IPD50N03S4L06ATMA1 제조: Infineon 및 IPG20N04S4L07ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IPD50N03S4L06ATMA1 IPD50N03S4L06ATMA1 - 30V 50A N-Ch OptiMOS | Infineon

IPD50N03S4L06ATMA1 - 30V 50A N-Ch OptiMOS | Infineon

IPD50N03S4L06ATMA1 ✓ 활성

사양 비교

파라미터 IPD50N03S4L06ATMA1 IPG20N04S4L07ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.49 $1.65
FET Type N-Channel, Enhancement Mode 2x N-Channel (Dual, Independent)
Drain-Source Voltage (V_DS) 30 V —
Continuous Drain Current (I_D, Tc) 50 A —
On-State Resistance (R_DS(on) max) 5.5 mOhm at V_GS = 10 V —
Gate Threshold Voltage (V_GS(th) typ) 2.2 V —
Total Gate Charge (Q_g) 31 nC at V_GS = 10 V —
Input Capacitance (C_iss) 2.33 nF —
Output Capacitance (C_oss) 600 pF —
Reverse Transfer Capacitance (C_rss) 34 pF —
Power Dissipation (P_D) 56 W at Tc = 25 C —
동작 접합 온도 -55 C to +175 C -55°C to +175°C
패키지 PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount PG-TDSON-8-4 (TDSON-8-4)
실장 유형 Surface Mount Surface Mount
MSL 레벨 MSL1 (up to 260 C peak reflow) MSL1 (per JEDEC J-STD-020, 260°C peak reflow)
Automotive Qualification AEC-Q101 —
Avalanche Rating 100% Avalanche Tested —
RoHS 상태 Compliant (Green Package) —
Manufacturer — Infineon Technologies
Series — OptiMOS™ T2
Drain-to-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) — 20 A
RDS(on) Max @ VGS=10V — 7.2 mΩ (typical)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge at VGS=10V]
Power Dissipation (PD) Max — 65 W
Logic-Level Gate Drive — Yes (4.5V VGS fully enhanced)
AEC-Q101 Qualification — Qualified
Avalanche Tested — 100% (per datasheet)
RoHS / Lead-Free — RoHS compliant, lead-free terminations

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