IPD50N03S4L06ATMA1 vs IPG20N04S4L07ATMA1 Comparison
Detailed side-by-side comparison of IPD50N03S4L06ATMA1 by Infineon and IPG20N04S4L07ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPG20N04S4L07ATMA1
IPG20N04S4L07ATMA1 - 40V 20A Dual N-Ch MOSFET 7.2mΞ© | Infineon
IPG20N04S4L07ATMA1 β ActiveSpecification Comparison
| Parameter | IPD50N03S4L06ATMA1 | IPG20N04S4L07ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.49 | $1.65 |
| FET Type | N-Channel, Enhancement Mode | 2x N-Channel (Dual, Independent) |
| Drain-Source Voltage (V_DS) | 30 V | β |
| Continuous Drain Current (I_D, Tc) | 50 A | β |
| On-State Resistance (R_DS(on) max) | 5.5 mOhm at V_GS = 10 V | β |
| Gate Threshold Voltage (V_GS(th) typ) | 2.2 V | β |
| Total Gate Charge (Q_g) | 31 nC at V_GS = 10 V | β |
| Input Capacitance (C_iss) | 2.33 nF | β |
| Output Capacitance (C_oss) | 600 pF | β |
| Reverse Transfer Capacitance (C_rss) | 34 pF | β |
| Power Dissipation (P_D) | 56 W at Tc = 25 C | β |
| Operating Junction Temperature | -55 C to +175 C | -55Β°C to +175Β°C |
| Package | PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount | PG-TDSON-8-4 (TDSON-8-4) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (up to 260 C peak reflow) | MSL1 (per JEDEC J-STD-020, 260Β°C peak reflow) |
| Automotive Qualification | AEC-Q101 | β |
| Avalanche Rating | 100% Avalanche Tested | β |
| RoHS Status | Compliant (Green Package) | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOSβ’ T2 |
| Drain-to-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A |
| RDS(on) Max @ VGS=10V | β | 7.2 mΞ© (typical) |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge at VGS=10V] |
| Power Dissipation (PD) Max | β | 65 W |
| Logic-Level Gate Drive | β | Yes (4.5V VGS fully enhanced) |
| AEC-Q101 Qualification | β | Qualified |
| Avalanche Tested | β | 100% (per datasheet) |
| RoHS / Lead-Free | β | RoHS compliant, lead-free terminations |