IPD60R210PFD7SAUMA1 vs IPD60R280P7SAUMA1 对比
详细并排对比 IPD60R210PFD7SAUMA1 出自 Infineon 和 IPD60R280P7SAUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPD60R210PFD7SAUMA1 - 600V CoolMOS PFD7 210mOhm MOSFET | Infineon
IPD60R210PFD7SAUMA1 ✓ 量产中
规格对比
| 参数 | IPD60R210PFD7SAUMA1 | IPD60R280P7SAUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.54 | $0.48 |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS PFD7 | — |
| Technology | Superjunction (CoolMOS) N-Channel Power MOSFET | CoolMOS P7 Superjunction (SJ) N-channel |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc) | 16 A | 12 A |
| On-Resistance (RDS(on), max) | 210 mOhm | — |
| Power Dissipation (Ptot, Tc=25C) | 64 W | — |
| Gate Threshold Voltage (VGS(th), typ) | 3.5 V | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg value] | — |
| Package Type | TO-252 (DPAK) | — |
| Manufacturer Package Designator | PG-TO252-3-344 | — |
| 安装类型 | Surface Mount (SMT) | Surface Mount |
| Pin Configuration | 3-Pin (2+Tab) - Gate, Drain (tab), Source | — |
| 工作温度范围 | -55C to +150C (TJ) | — |
| Lead-Free / RoHS | Yes (compliant) | — |
| Application Segment | Consumer-grade SMPS | — |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | — | 280 mΩ (typical) |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 4 V max @ ID = 190 µA |
| Total Power Dissipation (Ptot, Tc) | — | 53 W |
| Operating Junction Temperature (TJ) | — | -40 °C to +150 °C |
| 封装 | — | PG-TO252-3 (DPAK) |
| MSL 等级 | — | 1 |
| Series | — | CoolMOS P7 (7th generation, 600 V) |
| RoHS 状态 | — | Compliant |
| Integrated ESD Protection | — | Yes |