IPD60R280P7SAUMA1 vs IPD70R1K4P7SAUMA1 对比

详细并排对比 IPD60R280P7SAUMA1 出自 Infineon 和 IPD70R1K4P7SAUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPD60R280P7SAUMA1 IPD60R280P7SAUMA1 - 600V 280mΩ CoolMOS P7 MOSFET | Infineon

IPD60R280P7SAUMA1 - 600V 280mΩ CoolMOS P7 MOSFET | Infineon

IPD60R280P7SAUMA1 ✓ 量产中
Infineon
IPD70R1K4P7SAUMA1 IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 ✓ 量产中

规格对比

参数 IPD60R280P7SAUMA1 IPD70R1K4P7SAUMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.48 $0.52
Drain-Source Voltage (VDS) 600 V 700 V
Continuous Drain Current (ID, Tc) 12 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM]
Static Drain-Source On-Resistance (RDS(on)) 280 mΩ (typical) —
Gate-Source Voltage (VGS) Max ±20 V —
Gate Threshold Voltage (VGS(th)) 4 V max @ ID = 190 µA [DATA_NEEDED: VGS(th) typical]
Total Power Dissipation (Ptot, Tc) 53 W —
Operating Junction Temperature (TJ) -40 °C to +150 °C —
Technology CoolMOS P7 Superjunction (SJ) N-channel Superjunction (CoolMOS P7)
封装 PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
安装类型 Surface Mount Surface Mount
MSL 等级 1 —
Series CoolMOS P7 (7th generation, 600 V) —
RoHS 状态 Compliant Compliant
Integrated ESD Protection Yes —
Manufacturer — Infineon Technologies
Part Family — CoolMOS P7 (700V Superjunction)
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at Tc=25C — 4 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
On-Resistance RDS(on) max at VGS=10V, ID — 1.4 ohm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Total Power Dissipation (Ptot) at Tc=25C — 23 W
工作结温 — -55C to +150C
引脚数量 — 3 (Gate, Drain, Source)
Avalanche Energy Rated — Yes (100% avalanche tested)
ESD Protection — Integrated (per datasheet)

数据手册与资源

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