IPD60R280P7SAUMA1 vs IPD70R1K4P7SAUMA1 Comparison
Detailed side-by-side comparison of IPD60R280P7SAUMA1 by Infineon and IPD70R1K4P7SAUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD60R280P7SAUMA1 | IPD70R1K4P7SAUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Drain-Source Voltage (VDS) | 600 V | 700 V |
| Continuous Drain Current (ID, Tc) | 12 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| Static Drain-Source On-Resistance (RDS(on)) | 280 mΩ (typical) | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 4 V max @ ID = 190 µA | [DATA_NEEDED: VGS(th) typical] |
| Total Power Dissipation (Ptot, Tc) | 53 W | — |
| Operating Junction Temperature (TJ) | -40 °C to +150 °C | — |
| Technology | CoolMOS P7 Superjunction (SJ) N-channel | Superjunction (CoolMOS P7) |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | — |
| Series | CoolMOS P7 (7th generation, 600 V) | — |
| RoHS Status | Compliant | Compliant |
| Integrated ESD Protection | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | CoolMOS P7 (700V Superjunction) |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | 4 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| On-Resistance RDS(on) max at VGS=10V, ID | — | 1.4 ohm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Total Power Dissipation (Ptot) at Tc=25C | — | 23 W |
| Operating Junction Temperature | — | -55C to +150C |
| Pin Count | — | 3 (Gate, Drain, Source) |
| Avalanche Energy Rated | — | Yes (100% avalanche tested) |
| ESD Protection | — | Integrated (per datasheet) |