IPD80R1K4P7ATMA1 vs IPN80R1K2P7ATMA1 对比
详细并排对比 IPD80R1K4P7ATMA1 出自 Infineon 和 IPN80R1K2P7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPD80R1K4P7ATMA1 | IPN80R1K2P7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.62 | $0.51 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | — |
| Technology | N-Channel Superjunction | Superjunction (CoolMOS) |
| Drain-Source Voltage (VDS) | 800 V | — |
| Continuous Drain Current (ID) at Tc=25C | 4 A | — |
| On-Resistance (RDS(on)) typ/max | 1.2 ohm typ / 1.4 ohm max | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typ) | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg value] | — |
| 功耗（Ptot） | 32 W | — |
| 工作结温 | -55C to +150C | — |
| 封装 | PG-TO252-2 (DPAK) | SOT-223 (3-pin, 2 + tab) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 3 (Gate, Drain/Tab, Source) | — |
| RoHS 状态 | Compliant | — |
| REACH Status | Compliant | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Avalanche Energy Rated | Yes | — |
| Body Diode | Integrated, fast recovery | — |
| Family / Series | — | CoolMOS P7 |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage VDSS | — | 800 V |
| Continuous Drain Current ID (Tc) | — | 4.5 A |
| Maximum RDS(on) | — | 1200 mΩ at VGS = 10 V |
| Power Dissipation PD (Tc) | — | 6.8 W |
| Gate-Source Voltage VGSS | — | [DATA_NEEDED: VGSS absolute maximum] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| 工作温度范围 | — | -55°C to +150°C (TJ) |
| ESD Protection | — | ESD-protected gate (per CoolMOS P7 family) |
| RoHS Compliance | — | Compliant |