IPG16N10S4L61AATMA1 vs IAUC120N04S6N010ATMA1 对比
详细并排对比 IPG16N10S4L61AATMA1 出自 Infineon 和 IAUC120N04S6N010ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPG16N10S4L61AATMA1 - Dual 100V 16A Logic-Level MOSFET | Infineon
IPG16N10S4L61AATMA1 ✓ 量产中规格对比
| 参数 | IPG16N10S4L61AATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.12 | $0.68 |
| FET Type | Dual N-Channel (Array) | N-Channel |
| Technology | Logic-Level, Enhancement Mode | OptiMOS 6 |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at 25C | 16 A | — |
| Power Dissipation (PD) | 29 W | — |
| 封装 / 外壳 | PG-TDSON-8-10 (Wettable Flank) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55C to +175C (TJ) | — |
| 湿敏等级（MSL） | MSL1 (unlimited floor life at <30C / 85% RH) | — |
| Peak Reflow Temperature | 260 C | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Avalanche Tested | 100% (per datasheet) | — |
| AOI Compatible | Yes (Wettable Flank) | — |
| FET Feature | Logic Level Gate | — |
| Drain-Source Voltage (V(BR)DSS) | — | 40 V |
| Continuous Drain Current (Id, Tc) | — | 150 A |
| Power Dissipation (Pd, Tc) | — | 150 W |
| RDS(on) at VGS=10V (typ) | — | 1.0 mΩ |
| RDS(on) at VGS=10V (max per LCSC excerpt) | — | 1.03 mΩ |
| Gate-Source Threshold (VGS(th), typ) | — | 3 V (at 90 µA) |
| 封装 | — | PG-TDSON-8-34 (5x6 mm leadless) |
| Automotive Qualification | — | AEC-Q101 |
| 工作温度范围 | — | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) |
| MSL 等级 | — | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| RoHS 状态 | — | Compliant |
| Gate Drive Recommendation | — | 10 V VGS for full RDS(on) spec |
| Polarity | — | Single N-channel |