IPG20N04S4L08ATMA1 vs IAUC100N04S6L025ATMA1 对比
详细并排对比 IPG20N04S4L08ATMA1 出自 Infineon 和 IAUC100N04S6L025ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPG20N04S4L08ATMA1 - Dual N-Ch 40V 20A 8.2mΩ OptiMOS-T2 | Infineon
IPG20N04S4L08ATMA1 ✓ 量产中规格对比
| 参数 | IPG20N04S4L08ATMA1 | IAUC100N04S6L025ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.89 | $0.62 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPG20N04S4L08ATMA1 | — |
| FET Type | 2 N-Channel (Dual) | — |
| FET Feature | Logic Level Gate | — |
| Drain-to-Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id) @ 25°C | 20 A | — |
| On-Resistance Rds(on) max @ Vgs=10V, Id=17A | 8.2 mΩ | — |
| Power Dissipation (Pd) | 54 W | — |
| 工作温度 | -55°C to +175°C | — |
| 封装 / 外壳 | PG-TDSON-8-4 (TDSON-8) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Series | OptiMOS™-T2, Automotive, AEC-Q101 | — |
| MSL 等级 | MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) | 1 (per JEDEC J-STD-020) |
| Avalanche Tested | 100% Avalanche Tested | — |
| RoHS / Green | RoHS Compliant, Green Product | — |
| Part Status | Active | — |
| Technology | — | OptiMOS 6 40V trench MOSFET |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| On-State Resistance RDS(on) max at VGS=10V | — | 2.5 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Power Dissipation (PD) at TC=25C | — | 62 W |
| 工作结温 | — | -55 C to +175 C |
| 封装 | — | PG-TDSON-8 (SuperSO8 5x6 mm) |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes |