IPG20N04S4L08ATMA1 vs IAUC100N04S6L025ATMA1 Сравнение
Подробное сравнение бок о бок IPG20N04S4L08ATMA1 от Infineon и IAUC100N04S6L025ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPG20N04S4L08ATMA1 - Dual N-Ch 40V 20A 8.2mΩ OptiMOS-T2 | Infineon
IPG20N04S4L08ATMA1 ✓ АктивенInfineon
IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L025ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IPG20N04S4L08ATMA1 | IAUC100N04S6L025ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,89 | $0,62 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPG20N04S4L08ATMA1 | — |
| FET Type | 2 N-Channel (Dual) | — |
| FET Feature | Logic Level Gate | — |
| Drain-to-Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id) @ 25°C | 20 A | — |
| On-Resistance Rds(on) max @ Vgs=10V, Id=17A | 8.2 mΩ | — |
| Power Dissipation (Pd) | 54 W | — |
| Рабочая температура | -55°C to +175°C | — |
| Корпус / Типоразмер | PG-TDSON-8-4 (TDSON-8) | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Series | OptiMOS™-T2, Automotive, AEC-Q101 | — |
| Уровень MSL | MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) | 1 (per JEDEC J-STD-020) |
| Avalanche Tested | 100% Avalanche Tested | — |
| RoHS / Green | RoHS Compliant, Green Product | — |
| Part Status | Active | — |
| Technology | — | OptiMOS 6 40V trench MOSFET |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| On-State Resistance RDS(on) max at VGS=10V | — | 2.5 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Power Dissipation (PD) at TC=25C | — | 62 W |
| Рабочая температура перехода | — | -55 C to +175 C |
| Корпус | — | PG-TDSON-8 (SuperSO8 5x6 mm) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Статус RoHS | — | Compliant |
| Lead-Free | — | Yes |