IPG20N04S4L08ATMA1 vs IAUC100N04S6L025ATMA1 Comparison

Detailed side-by-side comparison of IPG20N04S4L08ATMA1 by Infineon and IAUC100N04S6L025ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC100N04S6L025ATMA1 IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L025ATMA1 ✓ Active

Specification Comparison

Parameter IPG20N04S4L08ATMA1 IAUC100N04S6L025ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Part Number IPG20N04S4L08ATMA1 —
FET Type 2 N-Channel (Dual) —
FET Feature Logic Level Gate —
Drain-to-Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ 25°C 20 A —
On-Resistance Rds(on) max @ Vgs=10V, Id=17A 8.2 mΩ —
Power Dissipation (Pd) 54 W —
Operating Temperature -55°C to +175°C —
Package / Case PG-TDSON-8-4 (TDSON-8) —
Mounting Type Surface Mount Surface Mount
Series OptiMOS™-T2, Automotive, AEC-Q101 —
MSL Level MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) 1 (per JEDEC J-STD-020)
Avalanche Tested 100% Avalanche Tested —
RoHS / Green RoHS Compliant, Green Product —
Part Status Active —
Technology — OptiMOS 6 40V trench MOSFET
Polarity — N-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TC=25C — 100 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulse rating]
On-State Resistance RDS(on) max at VGS=10V — 2.5 mOhm
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Power Dissipation (PD) at TC=25C — 62 W
Operating Junction Temperature — -55 C to +175 C
Package — PG-TDSON-8 (SuperSO8 5x6 mm)
Automotive Qualification — AEC-Q101 qualified
RoHS Status — Compliant
Lead-Free — Yes

Datasheets & Resources

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