IPG20N04S4L11ATMA1 vs IPG20N06S2L65AATMA1 对比
详细并排对比 IPG20N04S4L11ATMA1 出自 Infineon 和 IPG20N06S2L65AATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPG20N04S4L11ATMA1 | IPG20N06S2L65AATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.39 | $0.78 |
| FET Type | 2 N-Channel (Dual) | Dual N-Channel (Half Bridge / Independent) |
| FET Feature | Logic Level Gate | — |
| Drain-to-Source Voltage (VDS) | 40 V | 55 V |
| Continuous Drain Current (ID) @ 25C | 20 A per channel | — |
| R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A | 11.6 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Maximum Power Dissipation (PD) | 41 W | — |
| 工作温度范围 | -55C to +175C | — |
| 封装 | PG-TDSON-8-4 (Super S08 / 8-TDSON EP) | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 (260C peak reflow) | MSL1 (peak reflow 260 C) |
| Avalanche Rating | 100% Avalanche Tested | — |
| Automotive Qualification | AEC-Q101 Qualified | — |
| RoHS 状态 | Compliant (Green Product) | Compliant (Green Product) |
| Technology | OptiMOS-T2 trench | OptiMOS Trench MOSFET |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS |
| Continuous Drain Current (ID) | — | 20 A (per channel) |
| Power Dissipation (PD) | — | 43 W |
| Gate Threshold (VGS(th)) | — | Logic-Level |
| 工作温度 | — | -55 C to +175 C |
| AEC-Q101 Qualification | — | Yes |
| Avalanche Tested | — | 100% (per datasheet) |
| AOI Compatible | — | Yes (wettable flank) |