IPG20N06S4L14AATMA1 vs IPG16N10S461AATMA1 对比

详细并排对比 IPG20N06S4L14AATMA1 出自 Infineon 和 IPG16N10S461AATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPG20N06S4L14AATMA1 IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 ✓ 量产中
Infineon
IPG16N10S461AATMA1 IPG16N10S461AATMA1 - Dual N-Ch 100V 16A 61mΩ MOSFET | Infineon

IPG16N10S461AATMA1 - Dual N-Ch 100V 16A 61mΩ MOSFET | Infineon

IPG16N10S461AATMA1 ✓ 量产中

规格对比

参数 IPG20N06S4L14AATMA1 IPG16N10S461AATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.82 $0.82
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPG20N06S4L14AATMA1 —
FET Type 2 N-Channel (Dual) —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 20 A (per channel) 16 A
Power Dissipation (PD) 50 W —
RDS(on) at VGS=10V 13.7 mΩ typical —
RDS(on) at VGS=4.5V 14 mΩ typical —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th)] —
Logic-Level Gate Drive Yes —
工作温度范围 -55°C to +175°C (junction) -55 °C to +175 °C
封装 PG-TDSON-8-10 (Wettable Flank) PG-TDSON-8-10 (Wettable Flank)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Peak Reflow Temperature 260°C —
Avalanche Tested 100% (per datasheet) —
RoHS Compliance Green Product (RoHS compliant) —
AOI Compatible Yes (Wettable Flank) —
Technology OptiMOS™ Trench OptiMOS™ trench
Product Type — Dual N-Channel MOSFET Array
Drain-Source Voltage (VDS) — 100 V
On-Resistance R_DS(on) typ. — 61 mΩ
Total Power Dissipation (Ptot) — 29 W (T_C = 25°C)
Configuration — 2 N-Channel (Dual, separate)
Gate Threshold Voltage V_GS(th) typ. — [DATA_NEEDED: gate threshold voltage]
Maximum Junction Temperature — 175 °C
Terminal Count — 8
MSL 等级 — [DATA_NEEDED: MSL rating]
RoHS 状态 — Compliant
Built-in Body Diode — Yes
Channel Mode — Enhancement

数据手册与资源

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