IPG20N06S4L14AATMA1 vs IPG16N10S461AATMA1 Comparison
Detailed side-by-side comparison of IPG20N06S4L14AATMA1 by Infineon and IPG16N10S461AATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPG20N06S4L14AATMA1 | IPG16N10S461AATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPG20N06S4L14AATMA1 | — |
| FET Type | 2 N-Channel (Dual) | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 20 A (per channel) | 16 A |
| Power Dissipation (PD) | 50 W | — |
| RDS(on) at VGS=10V | 13.7 mΩ typical | — |
| RDS(on) at VGS=4.5V | 14 mΩ typical | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th)] | — |
| Logic-Level Gate Drive | Yes | — |
| Operating Temperature Range | -55°C to +175°C (junction) | -55 °C to +175 °C |
| Package | PG-TDSON-8-10 (Wettable Flank) | PG-TDSON-8-10 (Wettable Flank) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| Peak Reflow Temperature | 260°C | — |
| Avalanche Tested | 100% (per datasheet) | — |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| AOI Compatible | Yes (Wettable Flank) | — |
| Technology | OptiMOS™ Trench | OptiMOS™ trench |
| Product Type | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (VDS) | — | 100 V |
| On-Resistance R_DS(on) typ. | — | 61 mΩ |
| Total Power Dissipation (Ptot) | — | 29 W (T_C = 25°C) |
| Configuration | — | 2 N-Channel (Dual, separate) |
| Gate Threshold Voltage V_GS(th) typ. | — | [DATA_NEEDED: gate threshold voltage] |
| Maximum Junction Temperature | — | 175 °C |
| Terminal Count | — | 8 |
| MSL Level | — | [DATA_NEEDED: MSL rating] |
| RoHS Status | — | Compliant |
| Built-in Body Diode | — | Yes |
| Channel Mode | — | Enhancement |