IPG20N10S4L35ATMA1 vs IPG20N04S408ATMA1 对比
详细并排对比 IPG20N10S4L35ATMA1 出自 Infineon 和 IPG20N04S408ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPG20N10S4L35ATMA1 | IPG20N04S408ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.66 | $0.78 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPG20N10S4L35ATMA1 | — |
| FET Type | 2 N-Channel (Dual) | Dual N-Channel |
| FET Feature | Logic Level Gate | — |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) at 25°C | 20 A | — |
| R<sub>DS(on)</sub> Max | 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A | — |
| Gate Threshold (V<sub>GS(th)</sub>) | [DATA_NEEDED: typical Vgs(th) value] | — |
| Power Dissipation (P<sub>D</sub>) | 43 W | — |
| 工作温度 | 175°C max junction | — |
| 安装类型 | Surface Mount | Surface Mount |
| 封装 / 外壳 | PG-TDSON-8-4 (8-Pin TDSON EP) | — |
| Automotive Qualification | AEC-Q101 | — |
| MSL 等级 | MSL1 (up to 260°C peak reflow) | MSL1 (260 degC peak reflow) |
| Series | OptiMOS™, Automotive | — |
| RoHS 状态 | Compliant (Green Product) | Compliant (Green Product) |
| Avalanche Rated | 100% Avalanche Tested | 100 percent tested |
| Technology | — | OptiMOS (trench MOSFET) |
| Drain-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D, per channel) | — | 20 A at 25 degC case |
| R_DS(on) max @ V_GS=10V | — | 7.6 mOhm |
| Maximum Power Dissipation (P_D) | — | 65 W |
| 工作结温 | — | -55 degC to +175 degC |
| 封装 | — | PG-TDSON-8-4 (SuperSO8 dual) |
| AEC-Q101 Qualified | — | Yes |
| Channel Count | — | 2 (independent) |
| Operating Mode | — | Enhancement mode, Normal Level |