IPG20N10S4L35ATMA1 vs IPG20N04S408ATMA1 Comparison

Detailed side-by-side comparison of IPG20N10S4L35ATMA1 by Infineon and IPG20N04S408ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPG20N10S4L35ATMA1 IPG20N10S4L35ATMA1 - 100V Dual N-Ch MOSFET, 35mΩ | Infineon

IPG20N10S4L35ATMA1 - 100V Dual N-Ch MOSFET, 35mΩ | Infineon

IPG20N10S4L35ATMA1 ✓ Active

Specification Comparison

Parameter IPG20N10S4L35ATMA1 IPG20N04S408ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Part Number IPG20N10S4L35ATMA1 —
FET Type 2 N-Channel (Dual) Dual N-Channel
FET Feature Logic Level Gate —
Drain-to-Source Voltage (V<sub>DSS</sub>) 100 V —
Continuous Drain Current (I<sub>D</sub>) at 25°C 20 A —
R<sub>DS(on)</sub> Max 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A —
Gate Threshold (V<sub>GS(th)</sub>) [DATA_NEEDED: typical Vgs(th) value] —
Power Dissipation (P<sub>D</sub>) 43 W —
Operating Temperature 175°C max junction —
Mounting Type Surface Mount Surface Mount
Package / Case PG-TDSON-8-4 (8-Pin TDSON EP) —
Automotive Qualification AEC-Q101 —
MSL Level MSL1 (up to 260°C peak reflow) MSL1 (260 degC peak reflow)
Series OptiMOS™, Automotive —
RoHS Status Compliant (Green Product) Compliant (Green Product)
Avalanche Rated 100% Avalanche Tested 100 percent tested
Technology — OptiMOS (trench MOSFET)
Drain-Source Voltage (V_DSS) — 40 V
Continuous Drain Current (I_D, per channel) — 20 A at 25 degC case
R_DS(on) max @ V_GS=10V — 7.6 mOhm
Maximum Power Dissipation (P_D) — 65 W
Operating Junction Temperature — -55 degC to +175 degC
Package — PG-TDSON-8-4 (SuperSO8 dual)
AEC-Q101 Qualified — Yes
Channel Count — 2 (independent)
Operating Mode — Enhancement mode, Normal Level

Datasheets & Resources

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