IPL65R130C7AUMA1 vs ISC011N04NM7VATMA1 对比
详细并排对比 IPL65R130C7AUMA1 出自 Infineon 和 ISC011N04NM7VATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPL65R130C7AUMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.79 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | — |
| Technology | Superjunction (SJ) N-channel MOSFET | Trench MOSFET, silicon |
| Drain-Source Voltage (V DS) | 650 V | — |
| Continuous Drain Current (I D, Tc=25°C) | 15 A | — |
| On-Resistance R DS(on) max | 130 mΩ | — |
| Power Dissipation (P D) | 102 W | — |
| 封装 | PG-VSON-4 | PG-TDSON-8 (source-down) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -40°C to +150°C (Tj) | -55 °C to +175 °C (TJ) |
| Gate Threshold Voltage (V GS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Gate Charge (Q G) | [DATA_NEEDED: total gate charge] | — |
| Rise Time (t r) | [DATA_NEEDED: rise time] | — |
| Fall Time (t f) | [DATA_NEEDED: fall time] | — |
| RoHS 状态 | Compliant | — |
| MSL 等级 | MSL 1 | MSL 1 (per JEDEC J-STD-020) |
| Product Family | — | OptiMOS 7 Power-Transistor |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| RoHS Compliance | — | Compliant (per Infineon product page) |