IPL65R130C7AUMA1 vs ISC011N04NM7VATMA1 Comparison
Detailed side-by-side comparison of IPL65R130C7AUMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL65R130C7AUMA1
IPL65R130C7AUMA1 - 650V 15A 130mΞ© CoolMOS C7 N-MOSFET | Infineon
IPL65R130C7AUMA1 β ActiveInfineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveSpecification Comparison
| Parameter | IPL65R130C7AUMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.79 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | β |
| Technology | Superjunction (SJ) N-channel MOSFET | Trench MOSFET, silicon |
| Drain-Source Voltage (V DS) | 650 V | β |
| Continuous Drain Current (I D, Tc=25Β°C) | 15 A | β |
| On-Resistance R DS(on) max | 130 mΞ© | β |
| Power Dissipation (P D) | 102 W | β |
| Package | PG-VSON-4 | PG-TDSON-8 (source-down) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -40Β°C to +150Β°C (Tj) | -55 Β°C to +175 Β°C (TJ) |
| Gate Threshold Voltage (V GS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Gate Charge (Q G) | [DATA_NEEDED: total gate charge] | β |
| Rise Time (t r) | [DATA_NEEDED: rise time] | β |
| Fall Time (t f) | [DATA_NEEDED: fall time] | β |
| RoHS Status | Compliant | β |
| MSL Level | MSL 1 | MSL 1 (per JEDEC J-STD-020) |
| Product Family | β | OptiMOS 7 Power-Transistor |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.1 mΞ© |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 136 W |
| Gate Threshold Voltage (Vth) | β | Up to 3.2 V |
| Short-Circuit Withstand | β | Yes (current-limited) |
| RoHS Compliance | β | Compliant (per Infineon product page) |