IPL65R200CFD7AUMA1 vs IPW60R037P7XKSA1 对比
详细并排对比 IPL65R200CFD7AUMA1 出自 Infineon 和 IPW60R037P7XKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPL65R200CFD7AUMA1 | IPW60R037P7XKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.52 | $3.55 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS CFD7 | CoolMOS™ P7 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 650 V | — |
| Continuous Drain Current (ID, Tc) | 14 A | — |
| Power Dissipation (PD, Tc) | 81 W | — |
| On-Resistance (RDS(on)) | 0.2 ohm at VGS=10V, ID=5.2A | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | — |
| Technology | CoolMOS Superjunction (SJ) | CoolMOS Superjunction (SJ) |
| 封装 | PG-VSON-4 | PG-TO247-3 (TO-247-3, through-hole) |
| 安装类型 | Surface Mount | Through Hole |
| 工作温度 | -55C to +150C (TJ) | — |
| Gate Charge (Qg) | [DATA_NEEDED: typical Qg value] | — |
| Body Diode | Fast-recovery intrinsic | — |
| Gate-Source ESD Protection | Yes (integrated) | — |
| RoHS 状态 | Compliant | Compliant |
| 晶体管类型 | — | N-Channel MOSFET (Superjunction) |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, Tc=25 °C) | — | 76 A |
| On-Resistance (R_DS(on), max, V_GS=10 V) | — | 37 mΩ |
| Power Dissipation (P_D, Tc=25 °C) | — | 255 W |
| Gate Threshold Voltage (V_GS(th), typ) | — | 3.5 V |
| 工作结温 | — | -55 °C to +150 °C |
| Orderable Part Number Suffix | — | XKSA1 (tube packaging, industrial) |
| Avalanche Rated | — | Yes |