IPL65R200CFD7AUMA1 vs IPW60R037P7XKSA1 Comparison
Detailed side-by-side comparison of IPL65R200CFD7AUMA1 by Infineon and IPW60R037P7XKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL65R200CFD7AUMA1
IPL65R200CFD7AUMA1 - 650V 14A CoolMOS CFD7 MOSFET | Infineon
IPL65R200CFD7AUMA1 β Active
Specification Comparison
| Parameter | IPL65R200CFD7AUMA1 | IPW60R037P7XKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.52 | $3.55 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS CFD7 | CoolMOSβ’ P7 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 650 V | β |
| Continuous Drain Current (ID, Tc) | 14 A | β |
| Power Dissipation (PD, Tc) | 81 W | β |
| On-Resistance (RDS(on)) | 0.2 ohm at VGS=10V, ID=5.2A | β |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | β |
| Technology | CoolMOS Superjunction (SJ) | CoolMOS Superjunction (SJ) |
| Package | PG-VSON-4 | PG-TO247-3 (TO-247-3, through-hole) |
| Mounting Type | Surface Mount | Through Hole |
| Operating Temperature | -55C to +150C (TJ) | β |
| Gate Charge (Qg) | [DATA_NEEDED: typical Qg value] | β |
| Body Diode | Fast-recovery intrinsic | β |
| Gate-Source ESD Protection | Yes (integrated) | β |
| RoHS Status | Compliant | Compliant |
| Transistor Type | β | N-Channel MOSFET (Superjunction) |
| Drain-Source Voltage (V_DSS) | β | 600 V |
| Continuous Drain Current (I_D, Tc=25 Β°C) | β | 76 A |
| On-Resistance (R_DS(on), max, V_GS=10 V) | β | 37 mΞ© |
| Power Dissipation (P_D, Tc=25 Β°C) | β | 255 W |
| Gate Threshold Voltage (V_GS(th), typ) | β | 3.5 V |
| Operating Junction Temperature | β | -55 Β°C to +150 Β°C |
| Orderable Part Number Suffix | β | XKSA1 (tube packaging, industrial) |
| Avalanche Rated | β | Yes |