IPN70R1K4P7SATMA1 vs IPN95R3K7P7ATMA1 对比

详细并排对比 IPN70R1K4P7SATMA1 出自 Infineon 和 IPN95R3K7P7ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPN70R1K4P7SATMA1 IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 ✓ 量产中

规格对比

参数 IPN70R1K4P7SATMA1 IPN95R3K7P7ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.48 $0.44
Manufacturer Infineon Technologies Infineon Technologies
Product Series CoolMOS P7 —
晶体管类型 N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (V(BR)DSS) 700 V —
Continuous Drain Current (ID) at TC 4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance (RDS(on)) 1.4 ohm class (per '1K4' suffix) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Power Dissipation (PD) at TC 6.2 W —
Technology Superjunction (CoolMOS P7) Super-junction (CoolMOS P7)
封装 PG-SOT223 (3-pin + tab, surface mount) PG-SOT223 (3-pin + tab, surface mount)
安装类型 Surface Mount Surface Mount
工作温度范围 -55C to +150C (TJ) —
Configuration Single with built-in diode —
引脚数量 3 (Gate, Drain, Source) —
DPAK Footprint Compatible Yes (drop-in alternative to DPAK per datasheet) —
RoHS 状态 Compliant Compliant
MSL 等级 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Series — CoolMOS P7
Drain-Source Voltage (VDS) — 950 V
Continuous Drain Current (ID) at Tc — 2.0 A
Power Dissipation (Pd) at Tc — 6 W
On-State Resistance (RDS(on)) max — 3700 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typ]
工作结温 — -55 C to +150 C
Lead-Free — Yes

数据手册与资源

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