IPN70R600P7SATMA1 vs IPN70R360P7SATMA1 对比

详细并排对比 IPN70R600P7SATMA1 出自 Infineon 和 IPN70R360P7SATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPN70R600P7SATMA1 IPN70R600P7SATMA1 - 700V 600mΩ CoolMOS P7 N-MOSFET | Infineon

IPN70R600P7SATMA1 - 700V 600mΩ CoolMOS P7 N-MOSFET | Infineon

IPN70R600P7SATMA1 ✓ 量产中
Infineon
IPN70R360P7SATMA1 IPN70R360P7SATMA1 - 700V 360mΩ CoolMOS P7 MOSFET | Infineon

IPN70R360P7SATMA1 - 700V 360mΩ CoolMOS P7 MOSFET | Infineon

IPN70R360P7SATMA1 ✓ 量产中

规格对比

参数 IPN70R600P7SATMA1 IPN70R360P7SATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.49 $0.58
Manufacturer Infineon Technologies —
Series CoolMOS P7 —
Technology Superjunction (CoolMOS) N-Channel MOSFET CoolMOS P7 Superjunction (SJ)
Polarity / Channel Type N-Channel —
Drain-Source Voltage (Vdss) 700 V 700 V
Continuous Drain Current (Id) @ Tc 8.5 A —
On-State Resistance Rds(on) max @ Vgs=10V 600 mΩ —
Power Dissipation (Pd) @ Tc 6.9 W —
Gate Threshold Voltage Vgs(th) typ [DATA_NEEDED: Vgs(th) typical value] —
Gate Charge Qg typ [DATA_NEEDED: Qg typical value] —
工作温度范围 -55°C to +150°C (Tj) -55°C to +150°C (junction)
封装 PG-SOT223 (3-pin + tab), surface mount PG-SOT223 (3-pin, 2+Tab)
安装类型 Surface Mount Surface Mount
Pin Configuration Pin 1 Gate, Pin 2 Drain, Pin 3 Source, Tab Drain —
RoHS Compliance Compliant —
MSL 等级 Level 1 (per JEDEC J-STD-020) —
Family Position 700V CoolMOS P7, 600mΩ class —
Drain Current Continuous (Id, Tc=25°C) — 12.5 A
On-State Resistance Rds(on) max (Vgs=10V) — 360 mΩ
Power Dissipation (Pd, Tc=25°C) — 7.2 W
Gate-Source Voltage (Vgs) max — [DATA_NEEDED: Vgs max rating]
Gate Threshold Voltage (Vth) typ — 3.0 V
Channel Type — N-Channel
Storage Temperature Range — -55°C to +150°C
ESD Protection (HBM) — Class 1C
Drain Tab Connection — Pin 3 (Tab)
RoHS / REACH — Compliant (per Infineon product page)

数据手册与资源

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