IPN70R600P7SATMA1 vs IPN70R360P7SATMA1 Comparison
Detailed side-by-side comparison of IPN70R600P7SATMA1 by Infineon and IPN70R360P7SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPN70R600P7SATMA1
IPN70R600P7SATMA1 - 700V 600mΞ© CoolMOS P7 N-MOSFET | Infineon
IPN70R600P7SATMA1 β ActiveInfineon
IPN70R360P7SATMA1
IPN70R360P7SATMA1 - 700V 360mΞ© CoolMOS P7 MOSFET | Infineon
IPN70R360P7SATMA1 β ActiveSpecification Comparison
| Parameter | IPN70R600P7SATMA1 | IPN70R360P7SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.49 | $0.58 |
| Manufacturer | Infineon Technologies | β |
| Series | CoolMOS P7 | β |
| Technology | Superjunction (CoolMOS) N-Channel MOSFET | CoolMOS P7 Superjunction (SJ) |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (Vdss) | 700 V | 700 V |
| Continuous Drain Current (Id) @ Tc | 8.5 A | β |
| On-State Resistance Rds(on) max @ Vgs=10V | 600 mΞ© | β |
| Power Dissipation (Pd) @ Tc | 6.9 W | β |
| Gate Threshold Voltage Vgs(th) typ | [DATA_NEEDED: Vgs(th) typical value] | β |
| Gate Charge Qg typ | [DATA_NEEDED: Qg typical value] | β |
| Operating Temperature Range | -55Β°C to +150Β°C (Tj) | -55Β°C to +150Β°C (junction) |
| Package | PG-SOT223 (3-pin + tab), surface mount | PG-SOT223 (3-pin, 2+Tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Configuration | Pin 1 Gate, Pin 2 Drain, Pin 3 Source, Tab Drain | β |
| RoHS Compliance | Compliant | β |
| MSL Level | Level 1 (per JEDEC J-STD-020) | β |
| Family Position | 700V CoolMOS P7, 600mΞ© class | β |
| Drain Current Continuous (Id, Tc=25Β°C) | β | 12.5 A |
| On-State Resistance Rds(on) max (Vgs=10V) | β | 360 mΞ© |
| Power Dissipation (Pd, Tc=25Β°C) | β | 7.2 W |
| Gate-Source Voltage (Vgs) max | β | [DATA_NEEDED: Vgs max rating] |
| Gate Threshold Voltage (Vth) typ | β | 3.0 V |
| Channel Type | β | N-Channel |
| Storage Temperature Range | β | -55Β°C to +150Β°C |
| ESD Protection (HBM) | β | Class 1C |
| Drain Tab Connection | β | Pin 3 (Tab) |
| RoHS / REACH | β | Compliant (per Infineon product page) |