IPP100N12S305AKSA1 vs IPB027N10N3GATMA1 对比
详细并排对比 IPP100N12S305AKSA1 出自 Infineon 和 IPB027N10N3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon
IPP100N12S305AKSA1 ✓ 量产中
规格对比
| 参数 | IPP100N12S305AKSA1 | IPB027N10N3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.05 | $1.62 |
| 晶体管类型 | N-Channel MOSFET | — |
| Technology | OptiMOS trench | OptiMOS 3 (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 120 V | 100 V |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| 脉冲漏极电流 | [DATA_NEEDED: pulsed ID value] | — |
| Maximum Power Dissipation (Ptot) at Tc | 300 W | — |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Avalanche Energy, Single Pulse | [DATA_NEEDED: EAS] | — |
| 工作结温 | -55 °C to +175 °C | — |
| 封装 | TO-220 (PG-TO220-3-1) | PG-TO263-3 (D2PAK) |
| 安装类型 | Through Hole | Surface Mount |
| 引脚数量 | 3 | — |
| MSL Moisture Sensitivity Level | 1 (260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Tested | 100% tested | — |
| RoHS Compliance | Compliant (Green product) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A |
| Power Dissipation (PD) at TC=25°C | — | 300 W |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mΩ |
| On-Resistance RDS(on) typical at VGS=10V | — | 2.7 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical and min/max VGS(th) values] |
| 工作温度范围 | — | -55°C to +175°C (TJ) |
| Thermal Resistance Junction-to-Case (RθJC) | — | [DATA_NEEDED: exact °C/W value] |
| Single Pulse Avalanche Energy (EAS) | — | [DATA_NEEDED: datasheet EAS figure] |
| RoHS 状态 | — | Compliant |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg at VGS=10V] |